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Development and Modelling of Gallium Nitride Based Lateral Schottky Barrier Diodes with Anode Recesses for mmWave and THz Applications
This paper presents novel multi-channel RF lateral Schottky-barrier diodes (SBDs) based on AlGaN/GaN on low resistivity (LR) (σ = 0.02 Q·cm) silicon substrates. The developed technology offers a reduction of 37% in onset voltage, V(ON) (from 1.34 to 0.84 V), and 36% in ON-resistance, R(ON) (1.52 to...
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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MDPI
2022
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9864645/ https://www.ncbi.nlm.nih.gov/pubmed/36677063 http://dx.doi.org/10.3390/mi14010002 |