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A Phenomenological Model for Electrical Transport Characteristics of MSM Contacts Based on GNS

Graphene nanoscroll, because of attractive electronic, mechanical, thermoelectric and optoelectronics properties, is a suitable candidate for transistor and sensor applications. In this research, the electrical transport characteristics of high-performance field effect transistors based on graphene...

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Autores principales: Rahmani, Meisam, Ghafoorifard, Hassan, Ahmadi, Mohammad Taghi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9864923/
https://www.ncbi.nlm.nih.gov/pubmed/36677247
http://dx.doi.org/10.3390/mi14010184
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author Rahmani, Meisam
Ghafoorifard, Hassan
Ahmadi, Mohammad Taghi
author_facet Rahmani, Meisam
Ghafoorifard, Hassan
Ahmadi, Mohammad Taghi
author_sort Rahmani, Meisam
collection PubMed
description Graphene nanoscroll, because of attractive electronic, mechanical, thermoelectric and optoelectronics properties, is a suitable candidate for transistor and sensor applications. In this research, the electrical transport characteristics of high-performance field effect transistors based on graphene nanoscroll are studied in the framework of analytical modeling. To this end, the characterization of the proposed device is investigated by applying the analytical models of carrier concentration, quantum capacitance, surface potential, threshold voltage, subthreshold slope and drain induced barrier lowering. The analytical modeling starts with deriving carrier concentration and surface potential is modeled by adopting the model of quantum capacitance. The effects of quantum capacitance, oxide thickness, channel length, doping concentration, temperature and voltage are also taken into account in the proposed analytical models. To investigate the performance of the device, the current-voltage characteristics are also determined with respect to the carrier density and its kinetic energy. According to the obtained results, the surface potential value of front gate is higher than that of back side. It is noteworthy that channel length affects the position of minimum surface potential. The surface potential increases by increasing the drain-source voltage. The minimum potential increases as the value of quantum capacitance increases. Additionally, the minimum potential is symmetric for the symmetric structure (V(fg) = V(bg)). In addition, the threshold voltage increases by increasing the carrier concentration, temperature and oxide thickness. It is observable that the subthreshold slope gets closer to the ideal value of 60 mV/dec as the channel length increases. As oxide thickness increases the subthreshold slope also increases. For thinner gate oxide, the gate capacitance is larger while the gate has better control over the channel. The analytical results demonstrate a rational agreement with existing data in terms of trends and values.
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spelling pubmed-98649232023-01-22 A Phenomenological Model for Electrical Transport Characteristics of MSM Contacts Based on GNS Rahmani, Meisam Ghafoorifard, Hassan Ahmadi, Mohammad Taghi Micromachines (Basel) Article Graphene nanoscroll, because of attractive electronic, mechanical, thermoelectric and optoelectronics properties, is a suitable candidate for transistor and sensor applications. In this research, the electrical transport characteristics of high-performance field effect transistors based on graphene nanoscroll are studied in the framework of analytical modeling. To this end, the characterization of the proposed device is investigated by applying the analytical models of carrier concentration, quantum capacitance, surface potential, threshold voltage, subthreshold slope and drain induced barrier lowering. The analytical modeling starts with deriving carrier concentration and surface potential is modeled by adopting the model of quantum capacitance. The effects of quantum capacitance, oxide thickness, channel length, doping concentration, temperature and voltage are also taken into account in the proposed analytical models. To investigate the performance of the device, the current-voltage characteristics are also determined with respect to the carrier density and its kinetic energy. According to the obtained results, the surface potential value of front gate is higher than that of back side. It is noteworthy that channel length affects the position of minimum surface potential. The surface potential increases by increasing the drain-source voltage. The minimum potential increases as the value of quantum capacitance increases. Additionally, the minimum potential is symmetric for the symmetric structure (V(fg) = V(bg)). In addition, the threshold voltage increases by increasing the carrier concentration, temperature and oxide thickness. It is observable that the subthreshold slope gets closer to the ideal value of 60 mV/dec as the channel length increases. As oxide thickness increases the subthreshold slope also increases. For thinner gate oxide, the gate capacitance is larger while the gate has better control over the channel. The analytical results demonstrate a rational agreement with existing data in terms of trends and values. MDPI 2023-01-11 /pmc/articles/PMC9864923/ /pubmed/36677247 http://dx.doi.org/10.3390/mi14010184 Text en © 2023 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Rahmani, Meisam
Ghafoorifard, Hassan
Ahmadi, Mohammad Taghi
A Phenomenological Model for Electrical Transport Characteristics of MSM Contacts Based on GNS
title A Phenomenological Model for Electrical Transport Characteristics of MSM Contacts Based on GNS
title_full A Phenomenological Model for Electrical Transport Characteristics of MSM Contacts Based on GNS
title_fullStr A Phenomenological Model for Electrical Transport Characteristics of MSM Contacts Based on GNS
title_full_unstemmed A Phenomenological Model for Electrical Transport Characteristics of MSM Contacts Based on GNS
title_short A Phenomenological Model for Electrical Transport Characteristics of MSM Contacts Based on GNS
title_sort phenomenological model for electrical transport characteristics of msm contacts based on gns
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9864923/
https://www.ncbi.nlm.nih.gov/pubmed/36677247
http://dx.doi.org/10.3390/mi14010184
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