Effect of Acceptor Traps in GaN Buffer Layer on Breakdown Performance of AlGaN/GaN HEMTs

In this paper, Silvaco TCAD software is used to simulate the buffer traps in AlGaN/GaN high electron mobility transistors (HEMTs), and its effects on the breakdown performance and key parameters of the devices are investigated by changing the position and concentration of the acceptor traps in the b...

Descripción completa

Detalles Bibliográficos
Autores principales: Ma, Maodan, Cao, Yanrong, Lv, Hanghang, Wang, Zhiheng, Zhang, Xinxiang, Chen, Chuan, Wu, Linshan, Lv, Ling, Zheng, Xuefeng, Tian, Wenchao, Ma, Xiaohua, Hao, Yue
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9865198/
https://www.ncbi.nlm.nih.gov/pubmed/36677140
http://dx.doi.org/10.3390/mi14010079

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9865198/
https://www.ncbi.nlm.nih.gov/pubmed/36677140
http://dx.doi.org/10.3390/mi14010079

Ejemplares similares