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Molecular Dynamics Simulation Analysis of Damage and Expansion Process of Nanoindentation Single-Crystal 3C-SiC Carbide Specimens at Different Temperature

The molecular dynamics method was used to analyze the influence of simulated temperature on the damage expansion process of the 3C-SiC sample under nano-indentation loading in order to study the influence of temperature on the internal damage and expansion mechanism of the 3C-SiC single crystal samp...

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Autores principales: Ning, Xiang, Wu, Nanxing, Zhong, Mengjuan, Wen, Yuwei, Li, Bin, Jiang, Yi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9866078/
https://www.ncbi.nlm.nih.gov/pubmed/36677988
http://dx.doi.org/10.3390/nano13020235
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author Ning, Xiang
Wu, Nanxing
Zhong, Mengjuan
Wen, Yuwei
Li, Bin
Jiang, Yi
author_facet Ning, Xiang
Wu, Nanxing
Zhong, Mengjuan
Wen, Yuwei
Li, Bin
Jiang, Yi
author_sort Ning, Xiang
collection PubMed
description The molecular dynamics method was used to analyze the influence of simulated temperature on the damage expansion process of the 3C-SiC sample under nano-indentation loading in order to study the influence of temperature on the internal damage and expansion mechanism of the 3C-SiC single crystal sample further during the nano-indentation loading process. A simulation test platform for diamond indenter indentation was established. The process of stress and strain distribution, dislocation evolution, dislocation expansion and potential energy change were analyzed, combined with the radial distribution function and load displacement curve. The influence of temperature on the 3C-SiC material was discussed. The variation trend of the potential energy-step curve is basically the same at the temperatures of 0 K, 300 K, 600 K and 900 K. The difference in strain distribution was characterized by the influence of temperature on stress intensity, expansion direction and type. The microcosmic manifestation is the significant difference in the dislocation slip at low temperature. In the process of dislocation evolution and expansion, dislocation climbs at room temperature and increases at high temperature, which is closely related to energy release. This study has certain guiding significance for investigating the internal damage difference and temperature effect of the 3C-SiC sample.
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spelling pubmed-98660782023-01-22 Molecular Dynamics Simulation Analysis of Damage and Expansion Process of Nanoindentation Single-Crystal 3C-SiC Carbide Specimens at Different Temperature Ning, Xiang Wu, Nanxing Zhong, Mengjuan Wen, Yuwei Li, Bin Jiang, Yi Nanomaterials (Basel) Article The molecular dynamics method was used to analyze the influence of simulated temperature on the damage expansion process of the 3C-SiC sample under nano-indentation loading in order to study the influence of temperature on the internal damage and expansion mechanism of the 3C-SiC single crystal sample further during the nano-indentation loading process. A simulation test platform for diamond indenter indentation was established. The process of stress and strain distribution, dislocation evolution, dislocation expansion and potential energy change were analyzed, combined with the radial distribution function and load displacement curve. The influence of temperature on the 3C-SiC material was discussed. The variation trend of the potential energy-step curve is basically the same at the temperatures of 0 K, 300 K, 600 K and 900 K. The difference in strain distribution was characterized by the influence of temperature on stress intensity, expansion direction and type. The microcosmic manifestation is the significant difference in the dislocation slip at low temperature. In the process of dislocation evolution and expansion, dislocation climbs at room temperature and increases at high temperature, which is closely related to energy release. This study has certain guiding significance for investigating the internal damage difference and temperature effect of the 3C-SiC sample. MDPI 2023-01-04 /pmc/articles/PMC9866078/ /pubmed/36677988 http://dx.doi.org/10.3390/nano13020235 Text en © 2023 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Ning, Xiang
Wu, Nanxing
Zhong, Mengjuan
Wen, Yuwei
Li, Bin
Jiang, Yi
Molecular Dynamics Simulation Analysis of Damage and Expansion Process of Nanoindentation Single-Crystal 3C-SiC Carbide Specimens at Different Temperature
title Molecular Dynamics Simulation Analysis of Damage and Expansion Process of Nanoindentation Single-Crystal 3C-SiC Carbide Specimens at Different Temperature
title_full Molecular Dynamics Simulation Analysis of Damage and Expansion Process of Nanoindentation Single-Crystal 3C-SiC Carbide Specimens at Different Temperature
title_fullStr Molecular Dynamics Simulation Analysis of Damage and Expansion Process of Nanoindentation Single-Crystal 3C-SiC Carbide Specimens at Different Temperature
title_full_unstemmed Molecular Dynamics Simulation Analysis of Damage and Expansion Process of Nanoindentation Single-Crystal 3C-SiC Carbide Specimens at Different Temperature
title_short Molecular Dynamics Simulation Analysis of Damage and Expansion Process of Nanoindentation Single-Crystal 3C-SiC Carbide Specimens at Different Temperature
title_sort molecular dynamics simulation analysis of damage and expansion process of nanoindentation single-crystal 3c-sic carbide specimens at different temperature
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9866078/
https://www.ncbi.nlm.nih.gov/pubmed/36677988
http://dx.doi.org/10.3390/nano13020235
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