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Etch and Print: Graphene-Based Diodes for Silicon Technology

[Image: see text] The graphene–silicon junction is one of the simplest conceivable interfaces in graphene-integrated semiconductor technology that can lead to the development of future generation of electronic and optoelectronic devices. However, graphene’s integration is currently expensive and tim...

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Detalles Bibliográficos
Autores principales: Grillo, Alessandro, Peng, Zixing, Pelella, Aniello, Di Bartolomeo, Antonio, Casiraghi, Cinzia
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2022
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9878974/
https://www.ncbi.nlm.nih.gov/pubmed/36475589
http://dx.doi.org/10.1021/acsnano.2c10684
Descripción
Sumario:[Image: see text] The graphene–silicon junction is one of the simplest conceivable interfaces in graphene-integrated semiconductor technology that can lead to the development of future generation of electronic and optoelectronic devices. However, graphene’s integration is currently expensive and time-consuming and shows several challenges in terms of large-scale device fabrication, effectively preventing the possibility of implementing this technology into industrial processes. Here, we show a simple and cost-effective fabrication technique, based on inkjet printing, for the realization of printed graphene–silicon rectifying devices. The printed graphene–silicon diodes show an ON/OFF ratio higher than 3 orders of magnitude and a significant photovoltaic effect, resulting in a fill factor of ∼40% and a photocurrent efficiency of ∼2%, making the devices suitable for both electronic and optoelectronic applications. Finally, we demonstrate large-area pixeled photodetectors and compatibility with back-end-of-line fabrication processes.