THz Thin Film Varactor Based on Integrated Ferroelectric HfZrO(2)

[Image: see text] In this paper, we present a broadband microwave characterization of ferroelectric hafnium zirconium oxide (Hf(0.5)Zr(0.5)O(2)) metal–ferroelectric–metal (MFM) thin film varactor from 1 kHz up to 0.11 THz. The varactor is integrated into the back-end-of-line (BEoL) of 180 nm CMOS te...

Descripción completa

Detalles Bibliográficos
Autores principales: Abdulazhanov, Sukhrob, Le, Quang Huy, Huynh, Dang Khoa, Wang, Defu, Lehninger, David, Kämpfe, Thomas, Gerlach, Gerald
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2022
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9879207/
https://www.ncbi.nlm.nih.gov/pubmed/36711042
http://dx.doi.org/10.1021/acsaelm.2c01273

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9879207/
https://www.ncbi.nlm.nih.gov/pubmed/36711042
http://dx.doi.org/10.1021/acsaelm.2c01273

Ejemplares similares