Cargando…
High-temperature operation of gallium oxide memristors up to 600 K
Memristors have attracted much attention for application in neuromorphic devices and brain-inspired computing hardware. Their performance at high temperatures is required to be sufficiently reliable in neuromorphic computing, potential application to power electronics, and the aerospace industry. Th...
Autores principales: | Sato, Kento, Hayashi, Yusuke, Masaoka, Naoki, Tohei, Tetsuya, Sakai, Akira |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2023
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9886979/ https://www.ncbi.nlm.nih.gov/pubmed/36717634 http://dx.doi.org/10.1038/s41598-023-28075-4 |
Ejemplares similares
-
Comprehensive analysis of current leakage at individual screw and mixed threading dislocations in freestanding GaN substrates
por: Hamachi, Takeaki, et al.
Publicado: (2023) -
Demonstrative operation of four-terminal memristive devices fabricated on reduced TiO(2) single crystals
por: Takeuchi, Shotaro, et al.
Publicado: (2019) -
Multibit memory operation of metal-oxide bi-layer memristors
por: Stathopoulos, Spyros, et al.
Publicado: (2017) -
Micro- and Nanostructure Analysis of Vapor-Phase-Grown AlN on Face-to-Face Annealed Sputtered AlN/Nanopatterned Sapphire Substrate Templates
por: Nakanishi, Yudai, et al.
Publicado: (2023) -
Thermodynamic Temperatures of the Triple Points of Mercury and Gallium and in the Interval 217 K to 303 K
por: Moldover, M. R., et al.
Publicado: (1999)