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Room-temperature spin injection from a ferromagnetic semiconductor

Spin injection using ferromagnetic semiconductors at room temperature is a building block for the realization of spin-functional semiconductor devices. Nevertheless, this has been very challenging due to the lack of reliable room-temperature ferromagnetism in well-known group IV and III-V based semi...

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Detalles Bibliográficos
Autores principales: Goel, Shobhit, Khang, Nguyen Huynh Duy, Osada, Yuki, Anh, Le Duc, Hai, Pham Nam, Tanaka, Masaaki
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2023
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9905071/
https://www.ncbi.nlm.nih.gov/pubmed/36750728
http://dx.doi.org/10.1038/s41598-023-29169-9
Descripción
Sumario:Spin injection using ferromagnetic semiconductors at room temperature is a building block for the realization of spin-functional semiconductor devices. Nevertheless, this has been very challenging due to the lack of reliable room-temperature ferromagnetism in well-known group IV and III-V based semiconductors. Here, we demonstrate room-temperature spin injection by using spin pumping in a BiSb/(Ga,Fe)Sb heterostructure, where (Ga,Fe)Sb is a ferromagnetic semiconductor (FMS) with high Curie temperature (T(C)) and BiSb is a topological insulator (TI). Despite the very small magnetization of (Ga,Fe)Sb at room temperature (45 emu/cc), we detected spin injection from (Ga,Fe)Sb by utilizing the large inverse spin Hall effect (ISHE) in BiSb. Our study provides the first demonstration of spin injection at room temperature from a FMS.