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Graphene/MoS(2−x)O(x)/graphene photomemristor with tunable non-volatile responsivities for neuromorphic vision processing
Conventional artificial intelligence (AI) machine vision technology, based on the von Neumann architecture, uses separate sensing, computing, and storage units to process huge amounts of vision data generated in sensory terminals. The frequent movement of redundant data between sensors, processors a...
Autores principales: | , , , , , , , , , , , , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2023
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9905593/ https://www.ncbi.nlm.nih.gov/pubmed/36750548 http://dx.doi.org/10.1038/s41377-023-01079-5 |
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author | Fu, Xiao Li, Tangxin Cai, Bin Miao, Jinshui Panin, Gennady N. Ma, Xinyu Wang, Jinjin Jiang, Xiaoyong Li, Qing Dong, Yi Hao, Chunhui Sun, Juyi Xu, Hangyu Zhao, Qixiao Xia, Mengjia Song, Bo Chen, Fansheng Chen, Xiaoshuang Lu, Wei Hu, Weida |
author_facet | Fu, Xiao Li, Tangxin Cai, Bin Miao, Jinshui Panin, Gennady N. Ma, Xinyu Wang, Jinjin Jiang, Xiaoyong Li, Qing Dong, Yi Hao, Chunhui Sun, Juyi Xu, Hangyu Zhao, Qixiao Xia, Mengjia Song, Bo Chen, Fansheng Chen, Xiaoshuang Lu, Wei Hu, Weida |
author_sort | Fu, Xiao |
collection | PubMed |
description | Conventional artificial intelligence (AI) machine vision technology, based on the von Neumann architecture, uses separate sensing, computing, and storage units to process huge amounts of vision data generated in sensory terminals. The frequent movement of redundant data between sensors, processors and memory, however, results in high-power consumption and latency. A more efficient approach is to offload some of the memory and computational tasks to sensor elements that can perceive and process the optical signal simultaneously. Here, we proposed a non-volatile photomemristor, in which the reconfigurable responsivity can be modulated by the charge and/or photon flux through it and further stored in the device. The non-volatile photomemristor has a simple two-terminal architecture, in which photoexcited carriers and oxygen-related ions are coupled, leading to a displaced and pinched hysteresis in the current-voltage characteristics. For the first time, non-volatile photomemristors implement computationally complete logic with photoresponse-stateful operations, for which the same photomemristor serves as both a logic gate and memory, using photoresponse as a physical state variable instead of light, voltage and memresistance. The polarity reversal of photomemristors shows great potential for in-memory sensing and computing with feature extraction and image recognition for neuromorphic vision. |
format | Online Article Text |
id | pubmed-9905593 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2023 |
publisher | Nature Publishing Group UK |
record_format | MEDLINE/PubMed |
spelling | pubmed-99055932023-02-08 Graphene/MoS(2−x)O(x)/graphene photomemristor with tunable non-volatile responsivities for neuromorphic vision processing Fu, Xiao Li, Tangxin Cai, Bin Miao, Jinshui Panin, Gennady N. Ma, Xinyu Wang, Jinjin Jiang, Xiaoyong Li, Qing Dong, Yi Hao, Chunhui Sun, Juyi Xu, Hangyu Zhao, Qixiao Xia, Mengjia Song, Bo Chen, Fansheng Chen, Xiaoshuang Lu, Wei Hu, Weida Light Sci Appl Article Conventional artificial intelligence (AI) machine vision technology, based on the von Neumann architecture, uses separate sensing, computing, and storage units to process huge amounts of vision data generated in sensory terminals. The frequent movement of redundant data between sensors, processors and memory, however, results in high-power consumption and latency. A more efficient approach is to offload some of the memory and computational tasks to sensor elements that can perceive and process the optical signal simultaneously. Here, we proposed a non-volatile photomemristor, in which the reconfigurable responsivity can be modulated by the charge and/or photon flux through it and further stored in the device. The non-volatile photomemristor has a simple two-terminal architecture, in which photoexcited carriers and oxygen-related ions are coupled, leading to a displaced and pinched hysteresis in the current-voltage characteristics. For the first time, non-volatile photomemristors implement computationally complete logic with photoresponse-stateful operations, for which the same photomemristor serves as both a logic gate and memory, using photoresponse as a physical state variable instead of light, voltage and memresistance. The polarity reversal of photomemristors shows great potential for in-memory sensing and computing with feature extraction and image recognition for neuromorphic vision. Nature Publishing Group UK 2023-02-07 /pmc/articles/PMC9905593/ /pubmed/36750548 http://dx.doi.org/10.1038/s41377-023-01079-5 Text en © The Author(s) 2023 https://creativecommons.org/licenses/by/4.0/Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) . |
spellingShingle | Article Fu, Xiao Li, Tangxin Cai, Bin Miao, Jinshui Panin, Gennady N. Ma, Xinyu Wang, Jinjin Jiang, Xiaoyong Li, Qing Dong, Yi Hao, Chunhui Sun, Juyi Xu, Hangyu Zhao, Qixiao Xia, Mengjia Song, Bo Chen, Fansheng Chen, Xiaoshuang Lu, Wei Hu, Weida Graphene/MoS(2−x)O(x)/graphene photomemristor with tunable non-volatile responsivities for neuromorphic vision processing |
title | Graphene/MoS(2−x)O(x)/graphene photomemristor with tunable non-volatile responsivities for neuromorphic vision processing |
title_full | Graphene/MoS(2−x)O(x)/graphene photomemristor with tunable non-volatile responsivities for neuromorphic vision processing |
title_fullStr | Graphene/MoS(2−x)O(x)/graphene photomemristor with tunable non-volatile responsivities for neuromorphic vision processing |
title_full_unstemmed | Graphene/MoS(2−x)O(x)/graphene photomemristor with tunable non-volatile responsivities for neuromorphic vision processing |
title_short | Graphene/MoS(2−x)O(x)/graphene photomemristor with tunable non-volatile responsivities for neuromorphic vision processing |
title_sort | graphene/mos(2−x)o(x)/graphene photomemristor with tunable non-volatile responsivities for neuromorphic vision processing |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9905593/ https://www.ncbi.nlm.nih.gov/pubmed/36750548 http://dx.doi.org/10.1038/s41377-023-01079-5 |
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