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High–low Kelvin probe force spectroscopy for measuring the interface state density
The recently proposed high–low Kelvin probe force microscopy (KPFM) enables evaluation of the effects of semiconductor interface states with high spatial resolution using high and low AC bias frequencies compared with the cutoff frequency of the carrier transfer between the interface and bulk states...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Beilstein-Institut
2023
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9907014/ https://www.ncbi.nlm.nih.gov/pubmed/36761682 http://dx.doi.org/10.3762/bjnano.14.18 |