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Improving Stability of Roll-to-Roll (R2R) Gravure-Printed Carbon Nanotube-Based Thin Film Transistors via R2R Plasma-Enhanced Chemical Vapor-Deposited Silicon Nitride

Single-walled carbon nanotubes (SWCNTs) have an advantage in printing thin film transistors (TFTs) due to their high carrier mobility, excellent chemical stability, mechanical flexibility, and compatibility with solution-based processing. Thus, the printed SWCNT-based TFTs (pSWCNT-TFTs) showed signi...

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Autores principales: Shrestha, Sagar, Parajuli, Sajjan, Park, Jinhwa, Yang, Hao, Cho, Tae-Yeon, Eom, Ji-Ho, Cho, Seong-Keun, Lim, Jongsun, Cho, Gyoujin, Jung, Younsu
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9918980/
https://www.ncbi.nlm.nih.gov/pubmed/36770520
http://dx.doi.org/10.3390/nano13030559
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author Shrestha, Sagar
Parajuli, Sajjan
Park, Jinhwa
Yang, Hao
Cho, Tae-Yeon
Eom, Ji-Ho
Cho, Seong-Keun
Lim, Jongsun
Cho, Gyoujin
Jung, Younsu
author_facet Shrestha, Sagar
Parajuli, Sajjan
Park, Jinhwa
Yang, Hao
Cho, Tae-Yeon
Eom, Ji-Ho
Cho, Seong-Keun
Lim, Jongsun
Cho, Gyoujin
Jung, Younsu
author_sort Shrestha, Sagar
collection PubMed
description Single-walled carbon nanotubes (SWCNTs) have an advantage in printing thin film transistors (TFTs) due to their high carrier mobility, excellent chemical stability, mechanical flexibility, and compatibility with solution-based processing. Thus, the printed SWCNT-based TFTs (pSWCNT-TFTs) showed significant technological potential such as integrated circuits, conformable sensors, and display backplanes. However, the long-term environmental stability of the pSWCNT-TFTs hinders their commercialization. Thus, to extend the stability of the pSWCNT-TFTs, such devices should be passivated with low water and oxygen permeability. Herein, we introduced the silicon nitride (SiNx) passivation method on the pSWCNT-TFTs via a combination of roll-to-roll (R2R) gravure and the roll-to-roll plasma-enhanced vapor deposition (R2R-PECVD) process at low temperature (45 °C). We found that SiNx-passivated pSWCNT-TFTs showed ± 0.50 V of threshold voltage change at room temperature for 3 days and ±1.2 V of threshold voltage change for 3 h through a Temperature Humidity Test (85/85 test: Humidity 85%/Temperature 85 °C) for both p-type and n-type pSWCNT-TFTs. In addition, we found that the SiNx-passivated p-type and n-type pSWCNT-TFT-based CMOS-like ring oscillator, or 1-bit code generator, operated well after the 85/85 test for 24 h.
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spelling pubmed-99189802023-02-12 Improving Stability of Roll-to-Roll (R2R) Gravure-Printed Carbon Nanotube-Based Thin Film Transistors via R2R Plasma-Enhanced Chemical Vapor-Deposited Silicon Nitride Shrestha, Sagar Parajuli, Sajjan Park, Jinhwa Yang, Hao Cho, Tae-Yeon Eom, Ji-Ho Cho, Seong-Keun Lim, Jongsun Cho, Gyoujin Jung, Younsu Nanomaterials (Basel) Article Single-walled carbon nanotubes (SWCNTs) have an advantage in printing thin film transistors (TFTs) due to their high carrier mobility, excellent chemical stability, mechanical flexibility, and compatibility with solution-based processing. Thus, the printed SWCNT-based TFTs (pSWCNT-TFTs) showed significant technological potential such as integrated circuits, conformable sensors, and display backplanes. However, the long-term environmental stability of the pSWCNT-TFTs hinders their commercialization. Thus, to extend the stability of the pSWCNT-TFTs, such devices should be passivated with low water and oxygen permeability. Herein, we introduced the silicon nitride (SiNx) passivation method on the pSWCNT-TFTs via a combination of roll-to-roll (R2R) gravure and the roll-to-roll plasma-enhanced vapor deposition (R2R-PECVD) process at low temperature (45 °C). We found that SiNx-passivated pSWCNT-TFTs showed ± 0.50 V of threshold voltage change at room temperature for 3 days and ±1.2 V of threshold voltage change for 3 h through a Temperature Humidity Test (85/85 test: Humidity 85%/Temperature 85 °C) for both p-type and n-type pSWCNT-TFTs. In addition, we found that the SiNx-passivated p-type and n-type pSWCNT-TFT-based CMOS-like ring oscillator, or 1-bit code generator, operated well after the 85/85 test for 24 h. MDPI 2023-01-30 /pmc/articles/PMC9918980/ /pubmed/36770520 http://dx.doi.org/10.3390/nano13030559 Text en © 2023 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Shrestha, Sagar
Parajuli, Sajjan
Park, Jinhwa
Yang, Hao
Cho, Tae-Yeon
Eom, Ji-Ho
Cho, Seong-Keun
Lim, Jongsun
Cho, Gyoujin
Jung, Younsu
Improving Stability of Roll-to-Roll (R2R) Gravure-Printed Carbon Nanotube-Based Thin Film Transistors via R2R Plasma-Enhanced Chemical Vapor-Deposited Silicon Nitride
title Improving Stability of Roll-to-Roll (R2R) Gravure-Printed Carbon Nanotube-Based Thin Film Transistors via R2R Plasma-Enhanced Chemical Vapor-Deposited Silicon Nitride
title_full Improving Stability of Roll-to-Roll (R2R) Gravure-Printed Carbon Nanotube-Based Thin Film Transistors via R2R Plasma-Enhanced Chemical Vapor-Deposited Silicon Nitride
title_fullStr Improving Stability of Roll-to-Roll (R2R) Gravure-Printed Carbon Nanotube-Based Thin Film Transistors via R2R Plasma-Enhanced Chemical Vapor-Deposited Silicon Nitride
title_full_unstemmed Improving Stability of Roll-to-Roll (R2R) Gravure-Printed Carbon Nanotube-Based Thin Film Transistors via R2R Plasma-Enhanced Chemical Vapor-Deposited Silicon Nitride
title_short Improving Stability of Roll-to-Roll (R2R) Gravure-Printed Carbon Nanotube-Based Thin Film Transistors via R2R Plasma-Enhanced Chemical Vapor-Deposited Silicon Nitride
title_sort improving stability of roll-to-roll (r2r) gravure-printed carbon nanotube-based thin film transistors via r2r plasma-enhanced chemical vapor-deposited silicon nitride
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9918980/
https://www.ncbi.nlm.nih.gov/pubmed/36770520
http://dx.doi.org/10.3390/nano13030559
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