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Improving Stability of Roll-to-Roll (R2R) Gravure-Printed Carbon Nanotube-Based Thin Film Transistors via R2R Plasma-Enhanced Chemical Vapor-Deposited Silicon Nitride
Single-walled carbon nanotubes (SWCNTs) have an advantage in printing thin film transistors (TFTs) due to their high carrier mobility, excellent chemical stability, mechanical flexibility, and compatibility with solution-based processing. Thus, the printed SWCNT-based TFTs (pSWCNT-TFTs) showed signi...
Autores principales: | , , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2023
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9918980/ https://www.ncbi.nlm.nih.gov/pubmed/36770520 http://dx.doi.org/10.3390/nano13030559 |
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author | Shrestha, Sagar Parajuli, Sajjan Park, Jinhwa Yang, Hao Cho, Tae-Yeon Eom, Ji-Ho Cho, Seong-Keun Lim, Jongsun Cho, Gyoujin Jung, Younsu |
author_facet | Shrestha, Sagar Parajuli, Sajjan Park, Jinhwa Yang, Hao Cho, Tae-Yeon Eom, Ji-Ho Cho, Seong-Keun Lim, Jongsun Cho, Gyoujin Jung, Younsu |
author_sort | Shrestha, Sagar |
collection | PubMed |
description | Single-walled carbon nanotubes (SWCNTs) have an advantage in printing thin film transistors (TFTs) due to their high carrier mobility, excellent chemical stability, mechanical flexibility, and compatibility with solution-based processing. Thus, the printed SWCNT-based TFTs (pSWCNT-TFTs) showed significant technological potential such as integrated circuits, conformable sensors, and display backplanes. However, the long-term environmental stability of the pSWCNT-TFTs hinders their commercialization. Thus, to extend the stability of the pSWCNT-TFTs, such devices should be passivated with low water and oxygen permeability. Herein, we introduced the silicon nitride (SiNx) passivation method on the pSWCNT-TFTs via a combination of roll-to-roll (R2R) gravure and the roll-to-roll plasma-enhanced vapor deposition (R2R-PECVD) process at low temperature (45 °C). We found that SiNx-passivated pSWCNT-TFTs showed ± 0.50 V of threshold voltage change at room temperature for 3 days and ±1.2 V of threshold voltage change for 3 h through a Temperature Humidity Test (85/85 test: Humidity 85%/Temperature 85 °C) for both p-type and n-type pSWCNT-TFTs. In addition, we found that the SiNx-passivated p-type and n-type pSWCNT-TFT-based CMOS-like ring oscillator, or 1-bit code generator, operated well after the 85/85 test for 24 h. |
format | Online Article Text |
id | pubmed-9918980 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2023 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-99189802023-02-12 Improving Stability of Roll-to-Roll (R2R) Gravure-Printed Carbon Nanotube-Based Thin Film Transistors via R2R Plasma-Enhanced Chemical Vapor-Deposited Silicon Nitride Shrestha, Sagar Parajuli, Sajjan Park, Jinhwa Yang, Hao Cho, Tae-Yeon Eom, Ji-Ho Cho, Seong-Keun Lim, Jongsun Cho, Gyoujin Jung, Younsu Nanomaterials (Basel) Article Single-walled carbon nanotubes (SWCNTs) have an advantage in printing thin film transistors (TFTs) due to their high carrier mobility, excellent chemical stability, mechanical flexibility, and compatibility with solution-based processing. Thus, the printed SWCNT-based TFTs (pSWCNT-TFTs) showed significant technological potential such as integrated circuits, conformable sensors, and display backplanes. However, the long-term environmental stability of the pSWCNT-TFTs hinders their commercialization. Thus, to extend the stability of the pSWCNT-TFTs, such devices should be passivated with low water and oxygen permeability. Herein, we introduced the silicon nitride (SiNx) passivation method on the pSWCNT-TFTs via a combination of roll-to-roll (R2R) gravure and the roll-to-roll plasma-enhanced vapor deposition (R2R-PECVD) process at low temperature (45 °C). We found that SiNx-passivated pSWCNT-TFTs showed ± 0.50 V of threshold voltage change at room temperature for 3 days and ±1.2 V of threshold voltage change for 3 h through a Temperature Humidity Test (85/85 test: Humidity 85%/Temperature 85 °C) for both p-type and n-type pSWCNT-TFTs. In addition, we found that the SiNx-passivated p-type and n-type pSWCNT-TFT-based CMOS-like ring oscillator, or 1-bit code generator, operated well after the 85/85 test for 24 h. MDPI 2023-01-30 /pmc/articles/PMC9918980/ /pubmed/36770520 http://dx.doi.org/10.3390/nano13030559 Text en © 2023 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Shrestha, Sagar Parajuli, Sajjan Park, Jinhwa Yang, Hao Cho, Tae-Yeon Eom, Ji-Ho Cho, Seong-Keun Lim, Jongsun Cho, Gyoujin Jung, Younsu Improving Stability of Roll-to-Roll (R2R) Gravure-Printed Carbon Nanotube-Based Thin Film Transistors via R2R Plasma-Enhanced Chemical Vapor-Deposited Silicon Nitride |
title | Improving Stability of Roll-to-Roll (R2R) Gravure-Printed Carbon Nanotube-Based Thin Film Transistors via R2R Plasma-Enhanced Chemical Vapor-Deposited Silicon Nitride |
title_full | Improving Stability of Roll-to-Roll (R2R) Gravure-Printed Carbon Nanotube-Based Thin Film Transistors via R2R Plasma-Enhanced Chemical Vapor-Deposited Silicon Nitride |
title_fullStr | Improving Stability of Roll-to-Roll (R2R) Gravure-Printed Carbon Nanotube-Based Thin Film Transistors via R2R Plasma-Enhanced Chemical Vapor-Deposited Silicon Nitride |
title_full_unstemmed | Improving Stability of Roll-to-Roll (R2R) Gravure-Printed Carbon Nanotube-Based Thin Film Transistors via R2R Plasma-Enhanced Chemical Vapor-Deposited Silicon Nitride |
title_short | Improving Stability of Roll-to-Roll (R2R) Gravure-Printed Carbon Nanotube-Based Thin Film Transistors via R2R Plasma-Enhanced Chemical Vapor-Deposited Silicon Nitride |
title_sort | improving stability of roll-to-roll (r2r) gravure-printed carbon nanotube-based thin film transistors via r2r plasma-enhanced chemical vapor-deposited silicon nitride |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9918980/ https://www.ncbi.nlm.nih.gov/pubmed/36770520 http://dx.doi.org/10.3390/nano13030559 |
work_keys_str_mv | AT shresthasagar improvingstabilityofrolltorollr2rgravureprintedcarbonnanotubebasedthinfilmtransistorsviar2rplasmaenhancedchemicalvapordepositedsiliconnitride AT parajulisajjan improvingstabilityofrolltorollr2rgravureprintedcarbonnanotubebasedthinfilmtransistorsviar2rplasmaenhancedchemicalvapordepositedsiliconnitride AT parkjinhwa improvingstabilityofrolltorollr2rgravureprintedcarbonnanotubebasedthinfilmtransistorsviar2rplasmaenhancedchemicalvapordepositedsiliconnitride AT yanghao improvingstabilityofrolltorollr2rgravureprintedcarbonnanotubebasedthinfilmtransistorsviar2rplasmaenhancedchemicalvapordepositedsiliconnitride AT chotaeyeon improvingstabilityofrolltorollr2rgravureprintedcarbonnanotubebasedthinfilmtransistorsviar2rplasmaenhancedchemicalvapordepositedsiliconnitride AT eomjiho improvingstabilityofrolltorollr2rgravureprintedcarbonnanotubebasedthinfilmtransistorsviar2rplasmaenhancedchemicalvapordepositedsiliconnitride AT choseongkeun improvingstabilityofrolltorollr2rgravureprintedcarbonnanotubebasedthinfilmtransistorsviar2rplasmaenhancedchemicalvapordepositedsiliconnitride AT limjongsun improvingstabilityofrolltorollr2rgravureprintedcarbonnanotubebasedthinfilmtransistorsviar2rplasmaenhancedchemicalvapordepositedsiliconnitride AT chogyoujin improvingstabilityofrolltorollr2rgravureprintedcarbonnanotubebasedthinfilmtransistorsviar2rplasmaenhancedchemicalvapordepositedsiliconnitride AT jungyounsu improvingstabilityofrolltorollr2rgravureprintedcarbonnanotubebasedthinfilmtransistorsviar2rplasmaenhancedchemicalvapordepositedsiliconnitride |