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Short-Term Memory Characteristics of IGZO-Based Three-Terminal Devices
A three-terminal synaptic transistor enables more accurate controllability over the conductance compared with traditional two-terminal synaptic devices for the synaptic devices in hardware-oriented neuromorphic systems. In this work, we fabricated IGZO-based three-terminal devices comprising HfAlO(x...
Autores principales: | , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2023
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9919079/ https://www.ncbi.nlm.nih.gov/pubmed/36770256 http://dx.doi.org/10.3390/ma16031249 |
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author | Pyo, Juyeong Bae, Jong-Ho Kim, Sungjun Cho, Seongjae |
author_facet | Pyo, Juyeong Bae, Jong-Ho Kim, Sungjun Cho, Seongjae |
author_sort | Pyo, Juyeong |
collection | PubMed |
description | A three-terminal synaptic transistor enables more accurate controllability over the conductance compared with traditional two-terminal synaptic devices for the synaptic devices in hardware-oriented neuromorphic systems. In this work, we fabricated IGZO-based three-terminal devices comprising HfAlO(x) and CeO(x) layers to demonstrate the synaptic operations. The chemical compositions and thicknesses of the devices were verified by transmission electron microscopy and energy dispersive spectroscopy in cooperation. The excitatory post-synaptic current (EPSC), paired-pulse facilitation (PPF), short-term potentiation (STP), and short-term depression (STD) of the synaptic devices were realized for the short-term memory behaviors. The IGZO-based three-terminal synaptic transistor could thus be controlled appropriately by the amplitude, width, and interval time of the pulses for implementing the neuromorphic systems. |
format | Online Article Text |
id | pubmed-9919079 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2023 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-99190792023-02-12 Short-Term Memory Characteristics of IGZO-Based Three-Terminal Devices Pyo, Juyeong Bae, Jong-Ho Kim, Sungjun Cho, Seongjae Materials (Basel) Article A three-terminal synaptic transistor enables more accurate controllability over the conductance compared with traditional two-terminal synaptic devices for the synaptic devices in hardware-oriented neuromorphic systems. In this work, we fabricated IGZO-based three-terminal devices comprising HfAlO(x) and CeO(x) layers to demonstrate the synaptic operations. The chemical compositions and thicknesses of the devices were verified by transmission electron microscopy and energy dispersive spectroscopy in cooperation. The excitatory post-synaptic current (EPSC), paired-pulse facilitation (PPF), short-term potentiation (STP), and short-term depression (STD) of the synaptic devices were realized for the short-term memory behaviors. The IGZO-based three-terminal synaptic transistor could thus be controlled appropriately by the amplitude, width, and interval time of the pulses for implementing the neuromorphic systems. MDPI 2023-02-01 /pmc/articles/PMC9919079/ /pubmed/36770256 http://dx.doi.org/10.3390/ma16031249 Text en © 2023 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Pyo, Juyeong Bae, Jong-Ho Kim, Sungjun Cho, Seongjae Short-Term Memory Characteristics of IGZO-Based Three-Terminal Devices |
title | Short-Term Memory Characteristics of IGZO-Based Three-Terminal Devices |
title_full | Short-Term Memory Characteristics of IGZO-Based Three-Terminal Devices |
title_fullStr | Short-Term Memory Characteristics of IGZO-Based Three-Terminal Devices |
title_full_unstemmed | Short-Term Memory Characteristics of IGZO-Based Three-Terminal Devices |
title_short | Short-Term Memory Characteristics of IGZO-Based Three-Terminal Devices |
title_sort | short-term memory characteristics of igzo-based three-terminal devices |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9919079/ https://www.ncbi.nlm.nih.gov/pubmed/36770256 http://dx.doi.org/10.3390/ma16031249 |
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