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Novel Photonic Applications of Silicon Carbide

Silicon carbide (SiC) is emerging rapidly in novel photonic applications thanks to its unique photonic properties facilitated by the advances of nanotechnologies such as nanofabrication and nanofilm transfer. This review paper will start with the introduction of exceptional optical properties of sil...

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Autores principales: Ou, Haiyan, Shi, Xiaodong, Lu, Yaoqin, Kollmuss, Manuel, Steiner, Johannes, Tabouret, Vincent, Syväjärvi, Mikael, Wellmann, Peter, Chaussende, Didier
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9919445/
https://www.ncbi.nlm.nih.gov/pubmed/36770020
http://dx.doi.org/10.3390/ma16031014
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author Ou, Haiyan
Shi, Xiaodong
Lu, Yaoqin
Kollmuss, Manuel
Steiner, Johannes
Tabouret, Vincent
Syväjärvi, Mikael
Wellmann, Peter
Chaussende, Didier
author_facet Ou, Haiyan
Shi, Xiaodong
Lu, Yaoqin
Kollmuss, Manuel
Steiner, Johannes
Tabouret, Vincent
Syväjärvi, Mikael
Wellmann, Peter
Chaussende, Didier
author_sort Ou, Haiyan
collection PubMed
description Silicon carbide (SiC) is emerging rapidly in novel photonic applications thanks to its unique photonic properties facilitated by the advances of nanotechnologies such as nanofabrication and nanofilm transfer. This review paper will start with the introduction of exceptional optical properties of silicon carbide. Then, a key structure, i.e., silicon carbide on insulator stack (SiCOI), is discussed which lays solid fundament for tight light confinement and strong light-SiC interaction in high quality factor and low volume optical cavities. As examples, microring resonator, microdisk and photonic crystal cavities are summarized in terms of quality (Q) factor, volume and polytypes. A main challenge for SiC photonic application is complementary metal-oxide-semiconductor (CMOS) compatibility and low-loss material growth. The state-of-the-art SiC with different polytypes and growth methods are reviewed and a roadmap for the loss reduction is predicted for photonic applications. Combining the fact that SiC possesses many different color centers with the SiCOI platform, SiC is also deemed to be a very competitive platform for future quantum photonic integrated circuit applications. Its perspectives and potential impacts are included at the end of this review paper.
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spelling pubmed-99194452023-02-12 Novel Photonic Applications of Silicon Carbide Ou, Haiyan Shi, Xiaodong Lu, Yaoqin Kollmuss, Manuel Steiner, Johannes Tabouret, Vincent Syväjärvi, Mikael Wellmann, Peter Chaussende, Didier Materials (Basel) Review Silicon carbide (SiC) is emerging rapidly in novel photonic applications thanks to its unique photonic properties facilitated by the advances of nanotechnologies such as nanofabrication and nanofilm transfer. This review paper will start with the introduction of exceptional optical properties of silicon carbide. Then, a key structure, i.e., silicon carbide on insulator stack (SiCOI), is discussed which lays solid fundament for tight light confinement and strong light-SiC interaction in high quality factor and low volume optical cavities. As examples, microring resonator, microdisk and photonic crystal cavities are summarized in terms of quality (Q) factor, volume and polytypes. A main challenge for SiC photonic application is complementary metal-oxide-semiconductor (CMOS) compatibility and low-loss material growth. The state-of-the-art SiC with different polytypes and growth methods are reviewed and a roadmap for the loss reduction is predicted for photonic applications. Combining the fact that SiC possesses many different color centers with the SiCOI platform, SiC is also deemed to be a very competitive platform for future quantum photonic integrated circuit applications. Its perspectives and potential impacts are included at the end of this review paper. MDPI 2023-01-22 /pmc/articles/PMC9919445/ /pubmed/36770020 http://dx.doi.org/10.3390/ma16031014 Text en © 2023 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Review
Ou, Haiyan
Shi, Xiaodong
Lu, Yaoqin
Kollmuss, Manuel
Steiner, Johannes
Tabouret, Vincent
Syväjärvi, Mikael
Wellmann, Peter
Chaussende, Didier
Novel Photonic Applications of Silicon Carbide
title Novel Photonic Applications of Silicon Carbide
title_full Novel Photonic Applications of Silicon Carbide
title_fullStr Novel Photonic Applications of Silicon Carbide
title_full_unstemmed Novel Photonic Applications of Silicon Carbide
title_short Novel Photonic Applications of Silicon Carbide
title_sort novel photonic applications of silicon carbide
topic Review
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9919445/
https://www.ncbi.nlm.nih.gov/pubmed/36770020
http://dx.doi.org/10.3390/ma16031014
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