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A Study on the Increase of Leakage Current in AlGaN Detectors with Increasing Al Composition
The dark leakage current of Al(x)Ga(1-x)N Schottky barrier detectors with different Al contents is investigated. It was found that the dark leakage of Al(x)Ga(1-x)N detectors increased with increasing Al content. The XRD and SIMS results showed that there was no significant difference of the disloca...
| Autores principales: | , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2023
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9919510/ https://www.ncbi.nlm.nih.gov/pubmed/36770485 http://dx.doi.org/10.3390/nano13030525 |