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Wide-Temperature Tunable Phonon Thermal Switch Based on Ferroelectric Domain Walls of Tetragonal KTN Single Crystal

Ferroelectric domain walls (DWs) of perovskite oxide materials, which can be written and erased by an external electric field, offer the possibility to dynamically manipulate phonon scattering and thermal flux behavior. Different from previous ferroelectric materials, such as BaTiO(3), PbTiO(3), etc...

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Detalles Bibliográficos
Autores principales: Zhang, Shaodong, Li, Shuangru, Wei, Lei, Zhang, Huadi, Wang, Xuping, Liu, Bing, Zhang, Yuanyuan, Zhang, Rui, Qiu, Chengcheng
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9919584/
https://www.ncbi.nlm.nih.gov/pubmed/36770336
http://dx.doi.org/10.3390/nano13030376
Descripción
Sumario:Ferroelectric domain walls (DWs) of perovskite oxide materials, which can be written and erased by an external electric field, offer the possibility to dynamically manipulate phonon scattering and thermal flux behavior. Different from previous ferroelectric materials, such as BaTiO(3), PbTiO(3), etc., with an immutable and low Curie temperature. The Curie temperature of perovskite oxide KTa(1−x)Nb(x)O(3) (KTN) crystal can be tuned by altering the Ta/Nb ratio. In this work, the ferroelectric KTa(0.6)Nb(0.4)O(3) (KTN) single crystal is obtained by the Czochralski method. To understand the role of ferroelectric domains in thermal transport behavior, we perform a nonequilibrium molecular dynamics (NEMD) calculation on monodomain and 90° DWs of KTN at room temperature. The calculated thermal conductivity of monodomain KTN is 9.84 W/(m·k), consistent with experimental results of 8.96 W/(m·k), and distinctly decreased with the number of DWs indicating the outstanding performance of the thermal switch. We further evaluate the thermal boundary resistance (TBR) of KTN DWs. An interfacial thermal resistance value of 2.29 × 10(−9) K·m(2)/W and a large thermal switch ratio of 4.76 was obtained for a single DW of KTN. Our study shows that the ferroelectric KTN can provide great potential for the application of thermal switch at room temperature and over a broad temperature range.