A Novel Si Nanosheet Channel Release Process for the Fabrication of Gate-All-Around Transistors and Its Mechanism Investigation

The effect of the source/drain compressive stress on the mechanical stability of stacked Si nanosheets (NS) during the process of channel release has been investigated. The stress of the nanosheets in the stacking direction increased first and then decreased during the process of channel release by...

Descripción completa

Detalles Bibliográficos
Autores principales: Sun, Xin, Wang, Dawei, Qian, Lewen, Liu, Tao, Yang, Jingwen, Chen, Kun, Wang, Luyu, Huang, Ziqiang, Xu, Min, Wang, Chen, Wu, Chunlei, Xu, Saisheng, Zhang, David Wei
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Communication
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9920338/
https://www.ncbi.nlm.nih.gov/pubmed/36770465
http://dx.doi.org/10.3390/nano13030504

Ejemplares similares

Ejemplares similares