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Enhanced Optical and Electronic Properties of Silicon Nanosheets by Phosphorus Doping Passivation

In this paper, we use the spin-on-dopant technique for phosphorus doping to improve the photoelectric properties of soft-chemical-prepared silicon nanosheets. It was found that the luminescence intensity and luminescence lifetime of the doped samples was approximately 4 fold that of the undoped samp...

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Detalles Bibliográficos
Autores principales: Lei, Ye, Yang, Deren, Li, Dongsheng
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9920492/
https://www.ncbi.nlm.nih.gov/pubmed/36770085
http://dx.doi.org/10.3390/ma16031079
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author Lei, Ye
Yang, Deren
Li, Dongsheng
author_facet Lei, Ye
Yang, Deren
Li, Dongsheng
author_sort Lei, Ye
collection PubMed
description In this paper, we use the spin-on-dopant technique for phosphorus doping to improve the photoelectric properties of soft-chemical-prepared silicon nanosheets. It was found that the luminescence intensity and luminescence lifetime of the doped samples was approximately 4 fold that of the undoped samples, due to passivation of the surface defects by phosphorus doping. Meanwhile, phosphorus doping combined with high-temperature heat treatment can reduce the resistivity of multilayer silicon nanosheets by 6 fold compared with that of as-prepared samples. In conclusion, our work brings soft-chemical-prepared silicon nanosheets one step closer to practical application in the field of optoelectronics.
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spelling pubmed-99204922023-02-12 Enhanced Optical and Electronic Properties of Silicon Nanosheets by Phosphorus Doping Passivation Lei, Ye Yang, Deren Li, Dongsheng Materials (Basel) Article In this paper, we use the spin-on-dopant technique for phosphorus doping to improve the photoelectric properties of soft-chemical-prepared silicon nanosheets. It was found that the luminescence intensity and luminescence lifetime of the doped samples was approximately 4 fold that of the undoped samples, due to passivation of the surface defects by phosphorus doping. Meanwhile, phosphorus doping combined with high-temperature heat treatment can reduce the resistivity of multilayer silicon nanosheets by 6 fold compared with that of as-prepared samples. In conclusion, our work brings soft-chemical-prepared silicon nanosheets one step closer to practical application in the field of optoelectronics. MDPI 2023-01-26 /pmc/articles/PMC9920492/ /pubmed/36770085 http://dx.doi.org/10.3390/ma16031079 Text en © 2023 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Lei, Ye
Yang, Deren
Li, Dongsheng
Enhanced Optical and Electronic Properties of Silicon Nanosheets by Phosphorus Doping Passivation
title Enhanced Optical and Electronic Properties of Silicon Nanosheets by Phosphorus Doping Passivation
title_full Enhanced Optical and Electronic Properties of Silicon Nanosheets by Phosphorus Doping Passivation
title_fullStr Enhanced Optical and Electronic Properties of Silicon Nanosheets by Phosphorus Doping Passivation
title_full_unstemmed Enhanced Optical and Electronic Properties of Silicon Nanosheets by Phosphorus Doping Passivation
title_short Enhanced Optical and Electronic Properties of Silicon Nanosheets by Phosphorus Doping Passivation
title_sort enhanced optical and electronic properties of silicon nanosheets by phosphorus doping passivation
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9920492/
https://www.ncbi.nlm.nih.gov/pubmed/36770085
http://dx.doi.org/10.3390/ma16031079
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