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Enhanced Optical and Electronic Properties of Silicon Nanosheets by Phosphorus Doping Passivation
In this paper, we use the spin-on-dopant technique for phosphorus doping to improve the photoelectric properties of soft-chemical-prepared silicon nanosheets. It was found that the luminescence intensity and luminescence lifetime of the doped samples was approximately 4 fold that of the undoped samp...
Autores principales: | , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2023
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9920492/ https://www.ncbi.nlm.nih.gov/pubmed/36770085 http://dx.doi.org/10.3390/ma16031079 |
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author | Lei, Ye Yang, Deren Li, Dongsheng |
author_facet | Lei, Ye Yang, Deren Li, Dongsheng |
author_sort | Lei, Ye |
collection | PubMed |
description | In this paper, we use the spin-on-dopant technique for phosphorus doping to improve the photoelectric properties of soft-chemical-prepared silicon nanosheets. It was found that the luminescence intensity and luminescence lifetime of the doped samples was approximately 4 fold that of the undoped samples, due to passivation of the surface defects by phosphorus doping. Meanwhile, phosphorus doping combined with high-temperature heat treatment can reduce the resistivity of multilayer silicon nanosheets by 6 fold compared with that of as-prepared samples. In conclusion, our work brings soft-chemical-prepared silicon nanosheets one step closer to practical application in the field of optoelectronics. |
format | Online Article Text |
id | pubmed-9920492 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2023 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-99204922023-02-12 Enhanced Optical and Electronic Properties of Silicon Nanosheets by Phosphorus Doping Passivation Lei, Ye Yang, Deren Li, Dongsheng Materials (Basel) Article In this paper, we use the spin-on-dopant technique for phosphorus doping to improve the photoelectric properties of soft-chemical-prepared silicon nanosheets. It was found that the luminescence intensity and luminescence lifetime of the doped samples was approximately 4 fold that of the undoped samples, due to passivation of the surface defects by phosphorus doping. Meanwhile, phosphorus doping combined with high-temperature heat treatment can reduce the resistivity of multilayer silicon nanosheets by 6 fold compared with that of as-prepared samples. In conclusion, our work brings soft-chemical-prepared silicon nanosheets one step closer to practical application in the field of optoelectronics. MDPI 2023-01-26 /pmc/articles/PMC9920492/ /pubmed/36770085 http://dx.doi.org/10.3390/ma16031079 Text en © 2023 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Lei, Ye Yang, Deren Li, Dongsheng Enhanced Optical and Electronic Properties of Silicon Nanosheets by Phosphorus Doping Passivation |
title | Enhanced Optical and Electronic Properties of Silicon Nanosheets by Phosphorus Doping Passivation |
title_full | Enhanced Optical and Electronic Properties of Silicon Nanosheets by Phosphorus Doping Passivation |
title_fullStr | Enhanced Optical and Electronic Properties of Silicon Nanosheets by Phosphorus Doping Passivation |
title_full_unstemmed | Enhanced Optical and Electronic Properties of Silicon Nanosheets by Phosphorus Doping Passivation |
title_short | Enhanced Optical and Electronic Properties of Silicon Nanosheets by Phosphorus Doping Passivation |
title_sort | enhanced optical and electronic properties of silicon nanosheets by phosphorus doping passivation |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9920492/ https://www.ncbi.nlm.nih.gov/pubmed/36770085 http://dx.doi.org/10.3390/ma16031079 |
work_keys_str_mv | AT leiye enhancedopticalandelectronicpropertiesofsiliconnanosheetsbyphosphorusdopingpassivation AT yangderen enhancedopticalandelectronicpropertiesofsiliconnanosheetsbyphosphorusdopingpassivation AT lidongsheng enhancedopticalandelectronicpropertiesofsiliconnanosheetsbyphosphorusdopingpassivation |