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Polarization Doping in a GaN-InN System—Ab Initio Simulation

Polarization doping in a GaN-InN system with a graded composition layer was studied using ab initio simulations. The electric charge volume density in the graded concentration part was determined by spatial potential dependence. The emerging graded polarization charge was determined to show that it...

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Detalles Bibliográficos
Autores principales:	Ahmad, Ashfaq, Strak, Pawel, Kempisty, Pawel, Sakowski, Konrad, Piechota, Jacek, Kangawa, Yoshihiro, Grzegory, Izabella, Leszczynski, Michal, Zytkiewicz, Zbigniew R., Muziol, Grzegorz, Monroy, Eva, Kaminska, Agata, Krukowski, Stanislaw
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2023
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9920681/ https://www.ncbi.nlm.nih.gov/pubmed/36770233 http://dx.doi.org/10.3390/ma16031227

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