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Review of Ge(GeSn) and InGaAs Avalanche Diodes Operating in the SWIR Spectral Region
Among photodetectors, avalanche photodiodes (APDs) have an important place due to their excellent sensitivity to light. APDs transform photons into electrons and then multiply the electrons, leading to an amplified photocurrent. APDs are promising for faint light detection owing to this outstanding...
Autores principales: | , , , , , , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2023
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9922024/ https://www.ncbi.nlm.nih.gov/pubmed/36770566 http://dx.doi.org/10.3390/nano13030606 |
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author | Miao, Yuanhao Lin, Hongxiao Li, Ben Dong, Tianyu He, Chuangqi Du, Junhao Zhao, Xuewei Zhou, Ziwei Su, Jiale Wang, He Dong, Yan Lu, Bin Dong, Linpeng Radamson, Henry H. |
author_facet | Miao, Yuanhao Lin, Hongxiao Li, Ben Dong, Tianyu He, Chuangqi Du, Junhao Zhao, Xuewei Zhou, Ziwei Su, Jiale Wang, He Dong, Yan Lu, Bin Dong, Linpeng Radamson, Henry H. |
author_sort | Miao, Yuanhao |
collection | PubMed |
description | Among photodetectors, avalanche photodiodes (APDs) have an important place due to their excellent sensitivity to light. APDs transform photons into electrons and then multiply the electrons, leading to an amplified photocurrent. APDs are promising for faint light detection owing to this outstanding advantage, which will boost LiDAR applications. Although Si APDs have already been commercialized, their spectral region is very limited in many applications. Therefore, it is urgently demanded that the spectral region APDs be extended to the short-wavelength infrared (SWIR) region, which means better atmospheric transmission, a lower solar radiation background, a higher laser eye safety threshold, etc. Up until now, both Ge (GeSn) and InGaAs were employed as the SWIR absorbers. The aim of this review article is to provide a full understanding of Ge(GeSn) and InGaAs for PDs, with a focus on APD operation in the SWIR spectral region, which can be integrated onto the Si platform and is potentially compatible with CMOS technology. |
format | Online Article Text |
id | pubmed-9922024 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2023 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-99220242023-02-12 Review of Ge(GeSn) and InGaAs Avalanche Diodes Operating in the SWIR Spectral Region Miao, Yuanhao Lin, Hongxiao Li, Ben Dong, Tianyu He, Chuangqi Du, Junhao Zhao, Xuewei Zhou, Ziwei Su, Jiale Wang, He Dong, Yan Lu, Bin Dong, Linpeng Radamson, Henry H. Nanomaterials (Basel) Review Among photodetectors, avalanche photodiodes (APDs) have an important place due to their excellent sensitivity to light. APDs transform photons into electrons and then multiply the electrons, leading to an amplified photocurrent. APDs are promising for faint light detection owing to this outstanding advantage, which will boost LiDAR applications. Although Si APDs have already been commercialized, their spectral region is very limited in many applications. Therefore, it is urgently demanded that the spectral region APDs be extended to the short-wavelength infrared (SWIR) region, which means better atmospheric transmission, a lower solar radiation background, a higher laser eye safety threshold, etc. Up until now, both Ge (GeSn) and InGaAs were employed as the SWIR absorbers. The aim of this review article is to provide a full understanding of Ge(GeSn) and InGaAs for PDs, with a focus on APD operation in the SWIR spectral region, which can be integrated onto the Si platform and is potentially compatible with CMOS technology. MDPI 2023-02-02 /pmc/articles/PMC9922024/ /pubmed/36770566 http://dx.doi.org/10.3390/nano13030606 Text en © 2023 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Review Miao, Yuanhao Lin, Hongxiao Li, Ben Dong, Tianyu He, Chuangqi Du, Junhao Zhao, Xuewei Zhou, Ziwei Su, Jiale Wang, He Dong, Yan Lu, Bin Dong, Linpeng Radamson, Henry H. Review of Ge(GeSn) and InGaAs Avalanche Diodes Operating in the SWIR Spectral Region |
title | Review of Ge(GeSn) and InGaAs Avalanche Diodes Operating in the SWIR Spectral Region |
title_full | Review of Ge(GeSn) and InGaAs Avalanche Diodes Operating in the SWIR Spectral Region |
title_fullStr | Review of Ge(GeSn) and InGaAs Avalanche Diodes Operating in the SWIR Spectral Region |
title_full_unstemmed | Review of Ge(GeSn) and InGaAs Avalanche Diodes Operating in the SWIR Spectral Region |
title_short | Review of Ge(GeSn) and InGaAs Avalanche Diodes Operating in the SWIR Spectral Region |
title_sort | review of ge(gesn) and ingaas avalanche diodes operating in the swir spectral region |
topic | Review |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9922024/ https://www.ncbi.nlm.nih.gov/pubmed/36770566 http://dx.doi.org/10.3390/nano13030606 |
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