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Review of Ge(GeSn) and InGaAs Avalanche Diodes Operating in the SWIR Spectral Region

Among photodetectors, avalanche photodiodes (APDs) have an important place due to their excellent sensitivity to light. APDs transform photons into electrons and then multiply the electrons, leading to an amplified photocurrent. APDs are promising for faint light detection owing to this outstanding...

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Autores principales: Miao, Yuanhao, Lin, Hongxiao, Li, Ben, Dong, Tianyu, He, Chuangqi, Du, Junhao, Zhao, Xuewei, Zhou, Ziwei, Su, Jiale, Wang, He, Dong, Yan, Lu, Bin, Dong, Linpeng, Radamson, Henry H.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9922024/
https://www.ncbi.nlm.nih.gov/pubmed/36770566
http://dx.doi.org/10.3390/nano13030606
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author Miao, Yuanhao
Lin, Hongxiao
Li, Ben
Dong, Tianyu
He, Chuangqi
Du, Junhao
Zhao, Xuewei
Zhou, Ziwei
Su, Jiale
Wang, He
Dong, Yan
Lu, Bin
Dong, Linpeng
Radamson, Henry H.
author_facet Miao, Yuanhao
Lin, Hongxiao
Li, Ben
Dong, Tianyu
He, Chuangqi
Du, Junhao
Zhao, Xuewei
Zhou, Ziwei
Su, Jiale
Wang, He
Dong, Yan
Lu, Bin
Dong, Linpeng
Radamson, Henry H.
author_sort Miao, Yuanhao
collection PubMed
description Among photodetectors, avalanche photodiodes (APDs) have an important place due to their excellent sensitivity to light. APDs transform photons into electrons and then multiply the electrons, leading to an amplified photocurrent. APDs are promising for faint light detection owing to this outstanding advantage, which will boost LiDAR applications. Although Si APDs have already been commercialized, their spectral region is very limited in many applications. Therefore, it is urgently demanded that the spectral region APDs be extended to the short-wavelength infrared (SWIR) region, which means better atmospheric transmission, a lower solar radiation background, a higher laser eye safety threshold, etc. Up until now, both Ge (GeSn) and InGaAs were employed as the SWIR absorbers. The aim of this review article is to provide a full understanding of Ge(GeSn) and InGaAs for PDs, with a focus on APD operation in the SWIR spectral region, which can be integrated onto the Si platform and is potentially compatible with CMOS technology.
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spelling pubmed-99220242023-02-12 Review of Ge(GeSn) and InGaAs Avalanche Diodes Operating in the SWIR Spectral Region Miao, Yuanhao Lin, Hongxiao Li, Ben Dong, Tianyu He, Chuangqi Du, Junhao Zhao, Xuewei Zhou, Ziwei Su, Jiale Wang, He Dong, Yan Lu, Bin Dong, Linpeng Radamson, Henry H. Nanomaterials (Basel) Review Among photodetectors, avalanche photodiodes (APDs) have an important place due to their excellent sensitivity to light. APDs transform photons into electrons and then multiply the electrons, leading to an amplified photocurrent. APDs are promising for faint light detection owing to this outstanding advantage, which will boost LiDAR applications. Although Si APDs have already been commercialized, their spectral region is very limited in many applications. Therefore, it is urgently demanded that the spectral region APDs be extended to the short-wavelength infrared (SWIR) region, which means better atmospheric transmission, a lower solar radiation background, a higher laser eye safety threshold, etc. Up until now, both Ge (GeSn) and InGaAs were employed as the SWIR absorbers. The aim of this review article is to provide a full understanding of Ge(GeSn) and InGaAs for PDs, with a focus on APD operation in the SWIR spectral region, which can be integrated onto the Si platform and is potentially compatible with CMOS technology. MDPI 2023-02-02 /pmc/articles/PMC9922024/ /pubmed/36770566 http://dx.doi.org/10.3390/nano13030606 Text en © 2023 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Review
Miao, Yuanhao
Lin, Hongxiao
Li, Ben
Dong, Tianyu
He, Chuangqi
Du, Junhao
Zhao, Xuewei
Zhou, Ziwei
Su, Jiale
Wang, He
Dong, Yan
Lu, Bin
Dong, Linpeng
Radamson, Henry H.
Review of Ge(GeSn) and InGaAs Avalanche Diodes Operating in the SWIR Spectral Region
title Review of Ge(GeSn) and InGaAs Avalanche Diodes Operating in the SWIR Spectral Region
title_full Review of Ge(GeSn) and InGaAs Avalanche Diodes Operating in the SWIR Spectral Region
title_fullStr Review of Ge(GeSn) and InGaAs Avalanche Diodes Operating in the SWIR Spectral Region
title_full_unstemmed Review of Ge(GeSn) and InGaAs Avalanche Diodes Operating in the SWIR Spectral Region
title_short Review of Ge(GeSn) and InGaAs Avalanche Diodes Operating in the SWIR Spectral Region
title_sort review of ge(gesn) and ingaas avalanche diodes operating in the swir spectral region
topic Review
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9922024/
https://www.ncbi.nlm.nih.gov/pubmed/36770566
http://dx.doi.org/10.3390/nano13030606
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