Cargando…

Self-array of one-dimensional GaN nanorods using the electric field on dielectrophoresis for the photonic emitters of display pixel

Recently, high-efficiency III-nitride photonic emitters (PEs) for next-generation displays have been studied. Although micro-light-emitting diodes (μ-LEDs), one of the III-nitride PEs, have attracted considerable attention because of their high efficiency and size flexibility, they have encountered...

Descripción completa

Detalles Bibliográficos
Autores principales:	Kim, Sohyeon, Lee, Hannah, Jung, Gyeong-Hun, Kim, Minji, Kim, Ilsoo, Han, Myungsoo, Lee, Suhan, Oh, Semi, Lim, Jae-Hong, Kim, Kyoung-Kook
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	RSC 2022
Materias:	Chemistry
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9926892/ https://www.ncbi.nlm.nih.gov/pubmed/36798504 http://dx.doi.org/10.1039/d2na00496h

Ejemplares similares

Self-Aligned Hierarchical ZnO Nanorod/NiO Nanosheet Arrays for High Photon Extraction Efficiency of GaN-Based Photonic Emitter
por: Lee, Won-Seok, et al.
Publicado: (2020)

Improved Performance of GaN-Based Light-Emitting Diodes Grown on Si (111) Substrates with NH(3) Growth Interruption
por: Kim, Sang-Jo, et al.
Publicado: (2021)

Quantum dot-integrated GaN light-emitting diodes with resolution beyond the retinal limit
por: Bae, Junho, et al.
Publicado: (2022)

Hexagonal GaN nanorod-based photonic crystal slab as simultaneous yellow broadband reflector and blue emitter for phosphor-conversion white light emitting devices
por: Ko, Suk-Min, et al.
Publicado: (2020)

The effects of nanocavity and photonic crystal in InGaN/GaN nanorod LED arrays
por: Jiao, Qianqian, et al.
Publicado: (2016)

Linearly polarized photoluminescence of InGaN quantum disks embedded in GaN nanorods
por: Park, Youngsin, et al.
Publicado: (2018)

Enhanced Photon Emission Efficiency Using Surface Plasmon Effect of Pt Nanoparticles in Ultra-Violet Emitter
por: Choi, Hee-Jung, et al.
Publicado: (2019)

Emission Characteristics of InGaN/GaN Core-Shell Nanorods Embedded in a 3D Light-Emitting Diode
por: Jung, Byung Oh, et al.
Publicado: (2016)

Dephasing by optical phonons in GaN defect single-photon emitters
por: Geng, Yifei, et al.
Publicado: (2023)

GaN-Based Ultraviolet Passive Pixel Sensor on Silicon (111) Substrate
por: Lee, Chang-Ju, et al.
Publicado: (2019)

GaN nanorods grown on Si (111) substrates and exciton localization
por: Park, Young S, et al.
Publicado: (2011)

An Empirical Model for GaN Light Emitters with Dot-in-Wire Polar Nanostructures
por: Sui, Jingyang, et al.
Publicado: (2020)

Strain-induced yellow to blue emission tailoring of axial InGaN/GaN quantum wells in GaN nanorods synthesized by nanoimprint lithography
por: Avit, Geoffrey, et al.
Publicado: (2021)

Highly Efficient Excitonic Recombination of Non-polar ([Formula: see text] ) GaN Nanocrystals for Visible Light Emitter by Hydride Vapour Phase Epitaxy
por: Lee, Moonsang, et al.
Publicado: (2020)

High-Performance Ultraviolet Light Detection Using Nano-Scale-Fin Isolation AlGaN/GaN Heterostructures with ZnO Nanorods
por: Khan, Fasihullah, et al.
Publicado: (2019)

Insight into the performance of multi-color InGaN/GaN nanorod light emitting diodes
por: Robin, Y., et al.
Publicado: (2018)

Hydrothermally Grown In-doped ZnO Nanorods on p-GaN Films for Color-tunable Heterojunction Light-emitting-diodes
por: Park, Geun Chul, et al.
Publicado: (2015)

A Novel Way to Fill Green Gap of GaN-Based LEDs by Pinning Defects in Nanorod Array
por: Zhan, Jinglin, et al.
Publicado: (2022)

Investigation of Forward Tunneling Characteristics of InGaN/GaN Blue Light-Emitting Diodes on Freestanding GaN Detached from a Si Substrate
por: Lee, Moonsang, et al.
Publicado: (2018)

Wafer-scale Thermodynamically Stable GaN Nanorods via Two-Step Self-Limiting Epitaxy for Optoelectronic Applications
por: Kum, Hyun, et al.
Publicado: (2017)

Highly Rectifying Heterojunctions Formed by Annealed ZnO Nanorods on GaN Substrates
por: Tiagulskyi, Stanislav, et al.
Publicado: (2020)

Blue to yellow emission from (Ga,In)/GaN quantum wells grown on pixelated silicon substrate
por: Damilano, Benjamin, et al.
Publicado: (2020)

Plasmon-enhanced Electrically Light-emitting from ZnO Nanorod Arrays/p-GaN Heterostructure Devices
por: Lu, Junfeng, et al.
Publicado: (2016)

Electronic Transport Mechanism for Schottky Diodes Formed by Au/HVPE a-Plane GaN Templates Grown via In Situ GaN Nanodot Formation
por: Lee, Moonsang, et al.
Publicado: (2018)

State-of-the-art and prospects for intense red radiation from core–shell InGaN/GaN nanorods
por: Evropeitsev, Evgenii A., et al.
Publicado: (2020)

Hydrogen Generation using non-polar coaxial InGaN/GaN Multiple Quantum Well Structure Formed on Hollow n-GaN Nanowires
por: Park, Ji-Hyeon, et al.
Publicado: (2016)

Unidirectional Operation of p-GaN Gate AlGaN/GaN Heterojunction FET Using Rectifying Drain Electrode
por: Kim, Tae-Hyeon, et al.
Publicado: (2021)

Study of InN epitaxial films and nanorods grown on GaN template by RF-MOMBE
por: Chen, Wei-Chun, et al.
Publicado: (2012)

Electroluminescence of ordered ZnO nanorod array/p-GaN light-emitting diodes with graphene current spreading layer
por: Dong, Jing-Jing, et al.
Publicado: (2014)

Multi-wavelength emission from a single InGaN/GaN nanorod analyzed by cathodoluminescence hyperspectral imaging
por: Kusch, Gunnar, et al.
Publicado: (2018)

Large Optical Gain AlInN-Delta-GaN Quantum Well for Deep Ultraviolet Emitters
por: Tan, Chee-Keong, et al.
Publicado: (2016)

Near band gap luminescence in hybrid organic-inorganic structures based on sputtered GaN nanorods
por: Forsberg, Mathias, et al.
Publicado: (2017)

Investigation of Photonic-Crystal-Structured p-GaN Nanorods Fabricated by Polystyrene Nanosphere Lithography Method to Improve the Light Extraction Efficiency of InGaN/GaN Green Light-Emitting Diodes
por: Lei, Po-Hsun, et al.
Publicado: (2021)

Precise Temperature Mapping of GaN-Based LEDs by Quantitative Infrared Micro-Thermography
por: Chang, Ki Soo, et al.
Publicado: (2012)

Phosphor-free white-light emitters using in-situ GaN nanostructures grown by metal organic chemical vapor deposition
por: Min, Daehong, et al.
Publicado: (2015)

Defect-selective-etched porous GaN as a buffer layer for high efficiency InGaN/GaN light-emitting diodes
por: Park, Ah Hyun, et al.
Publicado: (2022)

Polarity-inverted lateral overgrowth and selective wet-etching and regrowth (PILOSWER) of GaN
por: Jang, Dongsoo, et al.
Publicado: (2018)

Suppressing spontaneous polarization of p-GaN by graphene oxide passivation: Augmented light output of GaN UV-LED
por: Jeong, Hyun, et al.
Publicado: (2015)

Ultraviolet photoconductive devices with an n-GaN nanorod-graphene hybrid structure synthesized by metal-organic chemical vapor deposition
por: Kang, San, et al.
Publicado: (2015)

Carrier Trap and Their Effects on the Surface and Core of AlGaN/GaN Nanowire Wrap-Gate Transistor
por: Mallem, Siva Pratap Reddy, et al.
Publicado: (2023)

Cannot write session to /tmp/vufind_sessions/sess_bigcskdg8kfpb0majqe3vieaj5