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First-Principles Study of Structural and Electronic Properties of Monolayer PtX(2) and Janus PtXY (X, Y = S, Se, and Te) via Strain Engineering
[Image: see text] In this work, the structural parameters and electronic properties of PtX(2) and Janus PtXY (X, Y = S, Se, and Te) are studied based on the density functional theory. The phonon spectra and the Born criteria of the elastic constant of these six monolayers confirm their stability. Al...
Autores principales: | , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
American Chemical Society
2023
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Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9933214/ https://www.ncbi.nlm.nih.gov/pubmed/36816647 http://dx.doi.org/10.1021/acsomega.2c07271 |
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author | Ge, Xun Zhou, Xiaohao Sun, Deyan Chen, Xiaoshuang |
author_facet | Ge, Xun Zhou, Xiaohao Sun, Deyan Chen, Xiaoshuang |
author_sort | Ge, Xun |
collection | PubMed |
description | [Image: see text] In this work, the structural parameters and electronic properties of PtX(2) and Janus PtXY (X, Y = S, Se, and Te) are studied based on the density functional theory. The phonon spectra and the Born criteria of the elastic constant of these six monolayers confirm their stability. All PtX(2) and Janus PtXY monolayers show an outstanding stretchability with Young’s modulus ranging from 61.023 to 82.124 N/m, about one-fifth that of graphene and half that of MoS(2), suggesting highly flexible materials. Our first-principles calculations reveal that the pristine PtX(2) and their Janus counterparts are indirect semiconductors with their band gap ranging from 0.760 to 1.810 eV at the Perdew–Burke–Ernzerhof level (1.128–2.580 eV at the Heyd–Scuseria–Ernzerhof level). By applying biaxial compressive and tensile strain, the electronic properties of all PtX(2) and Janus PtXY monolayers are widely tunable. Under small compressive strain, PtX(2) and Janus PtXY structures remain indirect semiconductors. PtTe(2), PtSeTe, and PtSTe monolayers undergo a semiconducting to metallic transition when the strain reaches −6, −8, and −10%, respectively. Interestingly, there is a transition from the indirect semiconductor to a quasi-direct one for all PtX(2) and Janus PtXY monolayers when the tensile strain is applied. |
format | Online Article Text |
id | pubmed-9933214 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2023 |
publisher | American Chemical Society |
record_format | MEDLINE/PubMed |
spelling | pubmed-99332142023-02-17 First-Principles Study of Structural and Electronic Properties of Monolayer PtX(2) and Janus PtXY (X, Y = S, Se, and Te) via Strain Engineering Ge, Xun Zhou, Xiaohao Sun, Deyan Chen, Xiaoshuang ACS Omega [Image: see text] In this work, the structural parameters and electronic properties of PtX(2) and Janus PtXY (X, Y = S, Se, and Te) are studied based on the density functional theory. The phonon spectra and the Born criteria of the elastic constant of these six monolayers confirm their stability. All PtX(2) and Janus PtXY monolayers show an outstanding stretchability with Young’s modulus ranging from 61.023 to 82.124 N/m, about one-fifth that of graphene and half that of MoS(2), suggesting highly flexible materials. Our first-principles calculations reveal that the pristine PtX(2) and their Janus counterparts are indirect semiconductors with their band gap ranging from 0.760 to 1.810 eV at the Perdew–Burke–Ernzerhof level (1.128–2.580 eV at the Heyd–Scuseria–Ernzerhof level). By applying biaxial compressive and tensile strain, the electronic properties of all PtX(2) and Janus PtXY monolayers are widely tunable. Under small compressive strain, PtX(2) and Janus PtXY structures remain indirect semiconductors. PtTe(2), PtSeTe, and PtSTe monolayers undergo a semiconducting to metallic transition when the strain reaches −6, −8, and −10%, respectively. Interestingly, there is a transition from the indirect semiconductor to a quasi-direct one for all PtX(2) and Janus PtXY monolayers when the tensile strain is applied. American Chemical Society 2023-02-03 /pmc/articles/PMC9933214/ /pubmed/36816647 http://dx.doi.org/10.1021/acsomega.2c07271 Text en © 2023 The Authors. Published by American Chemical Society https://creativecommons.org/licenses/by-nc-nd/4.0/Permits non-commercial access and re-use, provided that author attribution and integrity are maintained; but does not permit creation of adaptations or other derivative works (https://creativecommons.org/licenses/by-nc-nd/4.0/). |
spellingShingle | Ge, Xun Zhou, Xiaohao Sun, Deyan Chen, Xiaoshuang First-Principles Study of Structural and Electronic Properties of Monolayer PtX(2) and Janus PtXY (X, Y = S, Se, and Te) via Strain Engineering |
title | First-Principles
Study of Structural and Electronic
Properties of Monolayer PtX(2) and Janus PtXY (X, Y = S,
Se, and Te) via Strain Engineering |
title_full | First-Principles
Study of Structural and Electronic
Properties of Monolayer PtX(2) and Janus PtXY (X, Y = S,
Se, and Te) via Strain Engineering |
title_fullStr | First-Principles
Study of Structural and Electronic
Properties of Monolayer PtX(2) and Janus PtXY (X, Y = S,
Se, and Te) via Strain Engineering |
title_full_unstemmed | First-Principles
Study of Structural and Electronic
Properties of Monolayer PtX(2) and Janus PtXY (X, Y = S,
Se, and Te) via Strain Engineering |
title_short | First-Principles
Study of Structural and Electronic
Properties of Monolayer PtX(2) and Janus PtXY (X, Y = S,
Se, and Te) via Strain Engineering |
title_sort | first-principles
study of structural and electronic
properties of monolayer ptx(2) and janus ptxy (x, y = s,
se, and te) via strain engineering |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9933214/ https://www.ncbi.nlm.nih.gov/pubmed/36816647 http://dx.doi.org/10.1021/acsomega.2c07271 |
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