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High-performance and low-power source-gated transistors enabled by a solution-processed metal oxide homojunction
Cost-effective fabrication of mechanically flexible low-power electronics is important for emerging applications including wearable electronics, artificial intelligence, and the Internet of Things. Here, solution-processed source-gated transistors (SGTs) with an unprecedented intrinsic gain of ~2,00...
Autores principales: | , , , , , , , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
National Academy of Sciences
2023
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9934017/ https://www.ncbi.nlm.nih.gov/pubmed/36630451 http://dx.doi.org/10.1073/pnas.2216672120 |
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author | Zhuang, Xinming Kim, Joon-Seok Huang, Wei Chen, Yao Wang, Gang Chen, Jianhua Yao, Yao Wang, Zhi Liu, Fengjing Yu, Junsheng Cheng, Yuhua Yang, Zaixing Lauhon, Lincoln J. Marks, Tobin J. Facchetti, Antonio |
author_facet | Zhuang, Xinming Kim, Joon-Seok Huang, Wei Chen, Yao Wang, Gang Chen, Jianhua Yao, Yao Wang, Zhi Liu, Fengjing Yu, Junsheng Cheng, Yuhua Yang, Zaixing Lauhon, Lincoln J. Marks, Tobin J. Facchetti, Antonio |
author_sort | Zhuang, Xinming |
collection | PubMed |
description | Cost-effective fabrication of mechanically flexible low-power electronics is important for emerging applications including wearable electronics, artificial intelligence, and the Internet of Things. Here, solution-processed source-gated transistors (SGTs) with an unprecedented intrinsic gain of ~2,000, low saturation voltage of +0.8 ± 0.1 V, and a ~25.6 μW power consumption are realized using an indium oxide In(2)O(3)/In(2)O(3):polyethylenimine (PEI) blend homojunction with Au contacts on Si/SiO(2). Kelvin probe force microscopy confirms source-controlled operation of the SGT and reveals that PEI doping leads to more effective depletion of the reverse-biased Schottky contact source region. Furthermore, using a fluoride-doped AlO(x) gate dielectric, rigid (on a Si substrate) and flexible (on a polyimide substrate) SGTs were fabricated. These devices exhibit a low driving voltage of +2 V and power consumption of ~11.5 μW, yielding inverters with an outstanding voltage gain of >5,000. Furthermore, electrooculographic (EOG) signal monitoring can now be demonstrated using an SGT inverter, where a ~1.0 mV EOG signal is amplified to over 300 mV, indicating significant potential for applications in wearable medical sensing and human–computer interfacing. |
format | Online Article Text |
id | pubmed-9934017 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2023 |
publisher | National Academy of Sciences |
record_format | MEDLINE/PubMed |
spelling | pubmed-99340172023-07-11 High-performance and low-power source-gated transistors enabled by a solution-processed metal oxide homojunction Zhuang, Xinming Kim, Joon-Seok Huang, Wei Chen, Yao Wang, Gang Chen, Jianhua Yao, Yao Wang, Zhi Liu, Fengjing Yu, Junsheng Cheng, Yuhua Yang, Zaixing Lauhon, Lincoln J. Marks, Tobin J. Facchetti, Antonio Proc Natl Acad Sci U S A Physical Sciences Cost-effective fabrication of mechanically flexible low-power electronics is important for emerging applications including wearable electronics, artificial intelligence, and the Internet of Things. Here, solution-processed source-gated transistors (SGTs) with an unprecedented intrinsic gain of ~2,000, low saturation voltage of +0.8 ± 0.1 V, and a ~25.6 μW power consumption are realized using an indium oxide In(2)O(3)/In(2)O(3):polyethylenimine (PEI) blend homojunction with Au contacts on Si/SiO(2). Kelvin probe force microscopy confirms source-controlled operation of the SGT and reveals that PEI doping leads to more effective depletion of the reverse-biased Schottky contact source region. Furthermore, using a fluoride-doped AlO(x) gate dielectric, rigid (on a Si substrate) and flexible (on a polyimide substrate) SGTs were fabricated. These devices exhibit a low driving voltage of +2 V and power consumption of ~11.5 μW, yielding inverters with an outstanding voltage gain of >5,000. Furthermore, electrooculographic (EOG) signal monitoring can now be demonstrated using an SGT inverter, where a ~1.0 mV EOG signal is amplified to over 300 mV, indicating significant potential for applications in wearable medical sensing and human–computer interfacing. National Academy of Sciences 2023-01-11 2023-01-17 /pmc/articles/PMC9934017/ /pubmed/36630451 http://dx.doi.org/10.1073/pnas.2216672120 Text en Copyright © 2023 the Author(s). Published by PNAS. https://creativecommons.org/licenses/by-nc-nd/4.0/This article is distributed under Creative Commons Attribution-NonCommercial-NoDerivatives License 4.0 (CC BY-NC-ND) (https://creativecommons.org/licenses/by-nc-nd/4.0/) . |
spellingShingle | Physical Sciences Zhuang, Xinming Kim, Joon-Seok Huang, Wei Chen, Yao Wang, Gang Chen, Jianhua Yao, Yao Wang, Zhi Liu, Fengjing Yu, Junsheng Cheng, Yuhua Yang, Zaixing Lauhon, Lincoln J. Marks, Tobin J. Facchetti, Antonio High-performance and low-power source-gated transistors enabled by a solution-processed metal oxide homojunction |
title | High-performance and low-power source-gated transistors enabled by a solution-processed metal oxide homojunction |
title_full | High-performance and low-power source-gated transistors enabled by a solution-processed metal oxide homojunction |
title_fullStr | High-performance and low-power source-gated transistors enabled by a solution-processed metal oxide homojunction |
title_full_unstemmed | High-performance and low-power source-gated transistors enabled by a solution-processed metal oxide homojunction |
title_short | High-performance and low-power source-gated transistors enabled by a solution-processed metal oxide homojunction |
title_sort | high-performance and low-power source-gated transistors enabled by a solution-processed metal oxide homojunction |
topic | Physical Sciences |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9934017/ https://www.ncbi.nlm.nih.gov/pubmed/36630451 http://dx.doi.org/10.1073/pnas.2216672120 |
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