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High-performance and low-power source-gated transistors enabled by a solution-processed metal oxide homojunction

Cost-effective fabrication of mechanically flexible low-power electronics is important for emerging applications including wearable electronics, artificial intelligence, and the Internet of Things. Here, solution-processed source-gated transistors (SGTs) with an unprecedented intrinsic gain of ~2,00...

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Autores principales: Zhuang, Xinming, Kim, Joon-Seok, Huang, Wei, Chen, Yao, Wang, Gang, Chen, Jianhua, Yao, Yao, Wang, Zhi, Liu, Fengjing, Yu, Junsheng, Cheng, Yuhua, Yang, Zaixing, Lauhon, Lincoln J., Marks, Tobin J., Facchetti, Antonio
Formato: Online Artículo Texto
Lenguaje:English
Publicado: National Academy of Sciences 2023
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9934017/
https://www.ncbi.nlm.nih.gov/pubmed/36630451
http://dx.doi.org/10.1073/pnas.2216672120
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author Zhuang, Xinming
Kim, Joon-Seok
Huang, Wei
Chen, Yao
Wang, Gang
Chen, Jianhua
Yao, Yao
Wang, Zhi
Liu, Fengjing
Yu, Junsheng
Cheng, Yuhua
Yang, Zaixing
Lauhon, Lincoln J.
Marks, Tobin J.
Facchetti, Antonio
author_facet Zhuang, Xinming
Kim, Joon-Seok
Huang, Wei
Chen, Yao
Wang, Gang
Chen, Jianhua
Yao, Yao
Wang, Zhi
Liu, Fengjing
Yu, Junsheng
Cheng, Yuhua
Yang, Zaixing
Lauhon, Lincoln J.
Marks, Tobin J.
Facchetti, Antonio
author_sort Zhuang, Xinming
collection PubMed
description Cost-effective fabrication of mechanically flexible low-power electronics is important for emerging applications including wearable electronics, artificial intelligence, and the Internet of Things. Here, solution-processed source-gated transistors (SGTs) with an unprecedented intrinsic gain of ~2,000, low saturation voltage of +0.8 ± 0.1 V, and a ~25.6 μW power consumption are realized using an indium oxide In(2)O(3)/In(2)O(3):polyethylenimine (PEI) blend homojunction with Au contacts on Si/SiO(2). Kelvin probe force microscopy confirms source-controlled operation of the SGT and reveals that PEI doping leads to more effective depletion of the reverse-biased Schottky contact source region. Furthermore, using a fluoride-doped AlO(x) gate dielectric, rigid (on a Si substrate) and flexible (on a polyimide substrate) SGTs were fabricated. These devices exhibit a low driving voltage of +2 V and power consumption of ~11.5 μW, yielding inverters with an outstanding voltage gain of >5,000. Furthermore, electrooculographic (EOG) signal monitoring can now be demonstrated using an SGT inverter, where a ~1.0 mV EOG signal is amplified to over 300 mV, indicating significant potential for applications in wearable medical sensing and human–computer interfacing.
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spelling pubmed-99340172023-07-11 High-performance and low-power source-gated transistors enabled by a solution-processed metal oxide homojunction Zhuang, Xinming Kim, Joon-Seok Huang, Wei Chen, Yao Wang, Gang Chen, Jianhua Yao, Yao Wang, Zhi Liu, Fengjing Yu, Junsheng Cheng, Yuhua Yang, Zaixing Lauhon, Lincoln J. Marks, Tobin J. Facchetti, Antonio Proc Natl Acad Sci U S A Physical Sciences Cost-effective fabrication of mechanically flexible low-power electronics is important for emerging applications including wearable electronics, artificial intelligence, and the Internet of Things. Here, solution-processed source-gated transistors (SGTs) with an unprecedented intrinsic gain of ~2,000, low saturation voltage of +0.8 ± 0.1 V, and a ~25.6 μW power consumption are realized using an indium oxide In(2)O(3)/In(2)O(3):polyethylenimine (PEI) blend homojunction with Au contacts on Si/SiO(2). Kelvin probe force microscopy confirms source-controlled operation of the SGT and reveals that PEI doping leads to more effective depletion of the reverse-biased Schottky contact source region. Furthermore, using a fluoride-doped AlO(x) gate dielectric, rigid (on a Si substrate) and flexible (on a polyimide substrate) SGTs were fabricated. These devices exhibit a low driving voltage of +2 V and power consumption of ~11.5 μW, yielding inverters with an outstanding voltage gain of >5,000. Furthermore, electrooculographic (EOG) signal monitoring can now be demonstrated using an SGT inverter, where a ~1.0 mV EOG signal is amplified to over 300 mV, indicating significant potential for applications in wearable medical sensing and human–computer interfacing. National Academy of Sciences 2023-01-11 2023-01-17 /pmc/articles/PMC9934017/ /pubmed/36630451 http://dx.doi.org/10.1073/pnas.2216672120 Text en Copyright © 2023 the Author(s). Published by PNAS. https://creativecommons.org/licenses/by-nc-nd/4.0/This article is distributed under Creative Commons Attribution-NonCommercial-NoDerivatives License 4.0 (CC BY-NC-ND) (https://creativecommons.org/licenses/by-nc-nd/4.0/) .
spellingShingle Physical Sciences
Zhuang, Xinming
Kim, Joon-Seok
Huang, Wei
Chen, Yao
Wang, Gang
Chen, Jianhua
Yao, Yao
Wang, Zhi
Liu, Fengjing
Yu, Junsheng
Cheng, Yuhua
Yang, Zaixing
Lauhon, Lincoln J.
Marks, Tobin J.
Facchetti, Antonio
High-performance and low-power source-gated transistors enabled by a solution-processed metal oxide homojunction
title High-performance and low-power source-gated transistors enabled by a solution-processed metal oxide homojunction
title_full High-performance and low-power source-gated transistors enabled by a solution-processed metal oxide homojunction
title_fullStr High-performance and low-power source-gated transistors enabled by a solution-processed metal oxide homojunction
title_full_unstemmed High-performance and low-power source-gated transistors enabled by a solution-processed metal oxide homojunction
title_short High-performance and low-power source-gated transistors enabled by a solution-processed metal oxide homojunction
title_sort high-performance and low-power source-gated transistors enabled by a solution-processed metal oxide homojunction
topic Physical Sciences
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9934017/
https://www.ncbi.nlm.nih.gov/pubmed/36630451
http://dx.doi.org/10.1073/pnas.2216672120
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