Cargando…
High-performance and low-power source-gated transistors enabled by a solution-processed metal oxide homojunction
Cost-effective fabrication of mechanically flexible low-power electronics is important for emerging applications including wearable electronics, artificial intelligence, and the Internet of Things. Here, solution-processed source-gated transistors (SGTs) with an unprecedented intrinsic gain of ~2,00...
Autores principales: | Zhuang, Xinming, Kim, Joon-Seok, Huang, Wei, Chen, Yao, Wang, Gang, Chen, Jianhua, Yao, Yao, Wang, Zhi, Liu, Fengjing, Yu, Junsheng, Cheng, Yuhua, Yang, Zaixing, Lauhon, Lincoln J., Marks, Tobin J., Facchetti, Antonio |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
National Academy of Sciences
2023
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9934017/ https://www.ncbi.nlm.nih.gov/pubmed/36630451 http://dx.doi.org/10.1073/pnas.2216672120 |
Ejemplares similares
-
New Opportunities for High‐Performance Source‐Gated Transistors Using Unconventional Materials
por: Wang, Gang, et al.
Publicado: (2021) -
Completely foldable electronics based on homojunction polymer transistors and logics
por: Kim, Min Je, et al.
Publicado: (2021) -
Vertical organic electrochemical transistors for complementary circuits
por: Huang, Wei, et al.
Publicado: (2023) -
Vertically stacked SnSe homojunctions and negative capacitance for fast low-power tunneling transistors
por: Li, Hong, et al.
Publicado: (2020) -
Core-shell homojunction silicon vertical nanowire tunneling field-effect transistors
por: Yoon, Jun-Sik, et al.
Publicado: (2017)