Cargando…
Ultra-small low-threshold mid-infrared plasmonic nanowire lasers based on n-doped GaN
An ultra-small mid-infrared plasmonic nanowire laser based on n-doped GaN metallic material is proposed and studied by the finite-difference time-domain method. In comparison with the noble metals, nGaN is found to possess superior permittivity characteristics in the mid-infrared range, beneficial f...
Autores principales: | Zheng, Jiahui, Yan, Xin, Zhang, Xia, Ren, Xiaomin |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Springer US
2023
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9935799/ https://www.ncbi.nlm.nih.gov/pubmed/36795199 http://dx.doi.org/10.1186/s11671-023-03797-6 |
Ejemplares similares
-
Mid-infrared Photoconductive Response in AlGaN/GaN Step Quantum Wells
por: Rong, X., et al.
Publicado: (2015) -
Effect of Plasmonic Ag Nanoparticles on Emission Properties of Planar GaN Nanowires
por: Pozina, Galia, et al.
Publicado: (2023) -
Synthesis and Characterization of Glomerate GaN Nanowires
por: Qin, Lixia, et al.
Publicado: (2009) -
Mid-infrared photon sensing using InGaN/GaN nanodisks via intersubband absorption
por: Xing, Zhang, et al.
Publicado: (2022) -
Scattering Analysis of AlGaN/AlN/GaN Heterostructures with Fe-Doped GaN Buffer
por: Arteev, Dmitri S., et al.
Publicado: (2022)