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Mechanistic and Kinetic Analysis of Perovskite Memristors with Buffer Layers: The Case of a Two-Step Set Process
[Image: see text] With the increasing demand for artificially intelligent hardware systems for brain-inspired in-memory and neuromorphic computing, understanding the underlying mechanisms in the resistive switching of memristor devices is of paramount importance. Here, we demonstrate a two-step resi...
Autores principales: | , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
American Chemical Society
2023
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Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9940207/ https://www.ncbi.nlm.nih.gov/pubmed/36738280 http://dx.doi.org/10.1021/acs.jpclett.2c03669 |
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author | Gonzales, Cedric Guerrero, Antonio |
author_facet | Gonzales, Cedric Guerrero, Antonio |
author_sort | Gonzales, Cedric |
collection | PubMed |
description | [Image: see text] With the increasing demand for artificially intelligent hardware systems for brain-inspired in-memory and neuromorphic computing, understanding the underlying mechanisms in the resistive switching of memristor devices is of paramount importance. Here, we demonstrate a two-step resistive switching set process involving a complex interplay among mobile halide ions/vacancies (I(–)/V(I)(+)) and silver ions (Ag(+)) in perovskite-based memristors with thin undoped buffer layers. The resistive switching involves an initial gradual increase in current associated with a drift-related halide migration within the perovskite bulk layer followed by an abrupt resistive switching associated with diffusion of mobile Ag(+) conductive filamentary formation. Furthermore, we develop a dynamical model that explains the characteristic I–V curve that helps to untangle and quantify the switching regimes consistent with the experimental memristive response. This further insight into the two-step set process provides another degree of freedom in device design for versatile applications with varying levels of complexity. |
format | Online Article Text |
id | pubmed-9940207 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2023 |
publisher | American Chemical Society |
record_format | MEDLINE/PubMed |
spelling | pubmed-99402072023-02-21 Mechanistic and Kinetic Analysis of Perovskite Memristors with Buffer Layers: The Case of a Two-Step Set Process Gonzales, Cedric Guerrero, Antonio J Phys Chem Lett [Image: see text] With the increasing demand for artificially intelligent hardware systems for brain-inspired in-memory and neuromorphic computing, understanding the underlying mechanisms in the resistive switching of memristor devices is of paramount importance. Here, we demonstrate a two-step resistive switching set process involving a complex interplay among mobile halide ions/vacancies (I(–)/V(I)(+)) and silver ions (Ag(+)) in perovskite-based memristors with thin undoped buffer layers. The resistive switching involves an initial gradual increase in current associated with a drift-related halide migration within the perovskite bulk layer followed by an abrupt resistive switching associated with diffusion of mobile Ag(+) conductive filamentary formation. Furthermore, we develop a dynamical model that explains the characteristic I–V curve that helps to untangle and quantify the switching regimes consistent with the experimental memristive response. This further insight into the two-step set process provides another degree of freedom in device design for versatile applications with varying levels of complexity. American Chemical Society 2023-02-04 /pmc/articles/PMC9940207/ /pubmed/36738280 http://dx.doi.org/10.1021/acs.jpclett.2c03669 Text en © 2023 The Authors. Published by American Chemical Society https://creativecommons.org/licenses/by/4.0/Permits the broadest form of re-use including for commercial purposes, provided that author attribution and integrity are maintained (https://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Gonzales, Cedric Guerrero, Antonio Mechanistic and Kinetic Analysis of Perovskite Memristors with Buffer Layers: The Case of a Two-Step Set Process |
title | Mechanistic
and Kinetic Analysis of Perovskite Memristors
with Buffer Layers: The Case of a Two-Step Set Process |
title_full | Mechanistic
and Kinetic Analysis of Perovskite Memristors
with Buffer Layers: The Case of a Two-Step Set Process |
title_fullStr | Mechanistic
and Kinetic Analysis of Perovskite Memristors
with Buffer Layers: The Case of a Two-Step Set Process |
title_full_unstemmed | Mechanistic
and Kinetic Analysis of Perovskite Memristors
with Buffer Layers: The Case of a Two-Step Set Process |
title_short | Mechanistic
and Kinetic Analysis of Perovskite Memristors
with Buffer Layers: The Case of a Two-Step Set Process |
title_sort | mechanistic
and kinetic analysis of perovskite memristors
with buffer layers: the case of a two-step set process |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9940207/ https://www.ncbi.nlm.nih.gov/pubmed/36738280 http://dx.doi.org/10.1021/acs.jpclett.2c03669 |
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