A study of hydrogen plasma-induced charging effect in EUV lithography systems

In the extreme ultraviolet lithography system, EUV-induced hydrogen plasma charging effect is observed by in situ embedded micro-detector array. The 4k-pixel on-wafer array can detect and store the distributions of H(2) plasma in each in-pixel floating gate for non-destructive off-line read. The loc...

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Detalles Bibliográficos
Autores principales: Huang, Yao-Hung, Lin, Chrong Jung, King, Ya-Chin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2023
Materias:
Research
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9950305/
https://www.ncbi.nlm.nih.gov/pubmed/36823307
http://dx.doi.org/10.1186/s11671-023-03799-4
Descripción
Sumario:In the extreme ultraviolet lithography system, EUV-induced hydrogen plasma charging effect is observed by in situ embedded micro-detector array. The 4k-pixel on-wafer array can detect and store the distributions of H(2) plasma in each in-pixel floating gate for non-destructive off-line read. The local uniformity of H(2) plasma intensity extracted by the threshold voltages on an array and its distributions across a wafer by the average bit cell current of MDAs provide insights into the detailed conditions inside advanced EUV lithography chambers.

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