A study of hydrogen plasma-induced charging effect in EUV lithography systems

In the extreme ultraviolet lithography system, EUV-induced hydrogen plasma charging effect is observed by in situ embedded micro-detector array. The 4k-pixel on-wafer array can detect and store the distributions of H(2) plasma in each in-pixel floating gate for non-destructive off-line read. The loc...

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Autores principales: Huang, Yao-Hung, Lin, Chrong Jung, King, Ya-Chin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2023
Materias:
Research
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9950305/
https://www.ncbi.nlm.nih.gov/pubmed/36823307
http://dx.doi.org/10.1186/s11671-023-03799-4
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author Huang, Yao-Hung
Lin, Chrong Jung
King, Ya-Chin
author_facet Huang, Yao-Hung
Lin, Chrong Jung
King, Ya-Chin
author_sort Huang, Yao-Hung
collection PubMed
description In the extreme ultraviolet lithography system, EUV-induced hydrogen plasma charging effect is observed by in situ embedded micro-detector array. The 4k-pixel on-wafer array can detect and store the distributions of H(2) plasma in each in-pixel floating gate for non-destructive off-line read. The local uniformity of H(2) plasma intensity extracted by the threshold voltages on an array and its distributions across a wafer by the average bit cell current of MDAs provide insights into the detailed conditions inside advanced EUV lithography chambers.
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spelling pubmed-99503052023-02-25 A study of hydrogen plasma-induced charging effect in EUV lithography systems Huang, Yao-Hung Lin, Chrong Jung King, Ya-Chin Discov Nano Research In the extreme ultraviolet lithography system, EUV-induced hydrogen plasma charging effect is observed by in situ embedded micro-detector array. The 4k-pixel on-wafer array can detect and store the distributions of H(2) plasma in each in-pixel floating gate for non-destructive off-line read. The local uniformity of H(2) plasma intensity extracted by the threshold voltages on an array and its distributions across a wafer by the average bit cell current of MDAs provide insights into the detailed conditions inside advanced EUV lithography chambers. Springer US 2023-02-23 /pmc/articles/PMC9950305/ /pubmed/36823307 http://dx.doi.org/10.1186/s11671-023-03799-4 Text en © The Author(s) 2023 https://creativecommons.org/licenses/by/4.0/Open AccessThis article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article's Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article's Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) .
spellingShingle Research
Huang, Yao-Hung
Lin, Chrong Jung
King, Ya-Chin
A study of hydrogen plasma-induced charging effect in EUV lithography systems
title A study of hydrogen plasma-induced charging effect in EUV lithography systems
title_full A study of hydrogen plasma-induced charging effect in EUV lithography systems
title_fullStr A study of hydrogen plasma-induced charging effect in EUV lithography systems
title_full_unstemmed A study of hydrogen plasma-induced charging effect in EUV lithography systems
title_short A study of hydrogen plasma-induced charging effect in EUV lithography systems
title_sort study of hydrogen plasma-induced charging effect in euv lithography systems
topic Research
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9950305/
https://www.ncbi.nlm.nih.gov/pubmed/36823307
http://dx.doi.org/10.1186/s11671-023-03799-4
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