Cargando…
Highly Stable InSe-FET Biosensor for Ultra-Sensitive Detection of Breast Cancer Biomarker CA125
Two-dimensional materials-based field-effect transistors (FETs) are promising biosensors because of their outstanding electrical properties, tunable band gap, high specific surface area, label-free detection, and potential miniaturization for portable diagnostic products. However, it is crucial for...
Autores principales: | Ji, Hao, Wang, Zhenhua, Wang, Shun, Wang, Chao, Zhang, Kai, Zhang, Yu, Han, Lin |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2023
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9954013/ https://www.ncbi.nlm.nih.gov/pubmed/36831959 http://dx.doi.org/10.3390/bios13020193 |
Ejemplares similares
-
Electronic Structures of Twisted Bilayer InSe/InSe
and Heterobilayer Graphene/InSe
por: Yao, Xiaojing, et al.
Publicado: (2021) -
Enhancement of InSe Field-Effect-Transistor Performance against Degradation of InSe Film in Air Environment
por: Zhang, Yadong, et al.
Publicado: (2021) -
Remote Phonon Scattering in Two-Dimensional InSe FETs with High-κ Gate Stack
por: Chang, Pengying, et al.
Publicado: (2018) -
Strain Effect on Thermoelectric Performance of InSe Monolayer
por: Wang, Qian, et al.
Publicado: (2019) -
Electronic and Optical Properties of BP, InSe Monolayer and BP/InSe Heterojunction with Promising Photoelectronic Performance
por: Huang, Xingyong, et al.
Publicado: (2022)