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CMOS Radio Frequency Energy Harvester (RFEH) with Fully On-Chip Tunable Voltage-Booster for Wideband Sensitivity Enhancement

Radio frequency energy harvesting (RFEH) is one form of renewable energy harvesting currently seeing widespread popularity because many wireless electronic devices can coordinate their communications via RFEH, especially in CMOS technology. For RFEH, the sensitivity of detecting low-power ambient RF...

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Autores principales: Li, Yizhi, Rajendran, Jagadheswaran, Mariappan, Selvakumar, Rawat, Arvind Singh, Sal Hamid, Sofiyah, Kumar, Narendra, Othman, Masuri, Nathan, Arokia
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9958904/
https://www.ncbi.nlm.nih.gov/pubmed/36838092
http://dx.doi.org/10.3390/mi14020392
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author Li, Yizhi
Rajendran, Jagadheswaran
Mariappan, Selvakumar
Rawat, Arvind Singh
Sal Hamid, Sofiyah
Kumar, Narendra
Othman, Masuri
Nathan, Arokia
author_facet Li, Yizhi
Rajendran, Jagadheswaran
Mariappan, Selvakumar
Rawat, Arvind Singh
Sal Hamid, Sofiyah
Kumar, Narendra
Othman, Masuri
Nathan, Arokia
author_sort Li, Yizhi
collection PubMed
description Radio frequency energy harvesting (RFEH) is one form of renewable energy harvesting currently seeing widespread popularity because many wireless electronic devices can coordinate their communications via RFEH, especially in CMOS technology. For RFEH, the sensitivity of detecting low-power ambient RF signals is the utmost priority. The voltage boosting mechanisms at the input of the RFEH are typically applied to enhance its sensitivity. However, the bandwidth in which its sensitivity is maintained is very poor. This work implements a tunable voltage boosting (TVB) mechanism fully on-chip in a 3-stage cross-coupled differential drive rectifier (CCDD). The TVB is designed with an interleaved transformer architecture where the primary winding is implemented to the rectifier, while the secondary winding is connected to a MOSFET switch that tunes the inductance of the network. The TVB enables the sensitivity of the rectifier to be maintained at 1V DC output voltage with a minimum deviation of −2 dBm across a wide bandwidth of 3 to 6 GHz of 5G New Radio frequency (5GNR) bands. A DC output voltage of 1 V and a peak PCE of 83% at 3 GHz for −23 dBm input power are achieved. A PCE of more than 50% can be maintained at the sensitivity point of 1 V with the aid of TVB. The proposed CCDD-TVB mechanism enables the CMOS RFEH to be operated for wideband applications with optimum sensitivity, DC output voltage, and efficiency.
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spelling pubmed-99589042023-02-26 CMOS Radio Frequency Energy Harvester (RFEH) with Fully On-Chip Tunable Voltage-Booster for Wideband Sensitivity Enhancement Li, Yizhi Rajendran, Jagadheswaran Mariappan, Selvakumar Rawat, Arvind Singh Sal Hamid, Sofiyah Kumar, Narendra Othman, Masuri Nathan, Arokia Micromachines (Basel) Article Radio frequency energy harvesting (RFEH) is one form of renewable energy harvesting currently seeing widespread popularity because many wireless electronic devices can coordinate their communications via RFEH, especially in CMOS technology. For RFEH, the sensitivity of detecting low-power ambient RF signals is the utmost priority. The voltage boosting mechanisms at the input of the RFEH are typically applied to enhance its sensitivity. However, the bandwidth in which its sensitivity is maintained is very poor. This work implements a tunable voltage boosting (TVB) mechanism fully on-chip in a 3-stage cross-coupled differential drive rectifier (CCDD). The TVB is designed with an interleaved transformer architecture where the primary winding is implemented to the rectifier, while the secondary winding is connected to a MOSFET switch that tunes the inductance of the network. The TVB enables the sensitivity of the rectifier to be maintained at 1V DC output voltage with a minimum deviation of −2 dBm across a wide bandwidth of 3 to 6 GHz of 5G New Radio frequency (5GNR) bands. A DC output voltage of 1 V and a peak PCE of 83% at 3 GHz for −23 dBm input power are achieved. A PCE of more than 50% can be maintained at the sensitivity point of 1 V with the aid of TVB. The proposed CCDD-TVB mechanism enables the CMOS RFEH to be operated for wideband applications with optimum sensitivity, DC output voltage, and efficiency. MDPI 2023-02-04 /pmc/articles/PMC9958904/ /pubmed/36838092 http://dx.doi.org/10.3390/mi14020392 Text en © 2023 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Li, Yizhi
Rajendran, Jagadheswaran
Mariappan, Selvakumar
Rawat, Arvind Singh
Sal Hamid, Sofiyah
Kumar, Narendra
Othman, Masuri
Nathan, Arokia
CMOS Radio Frequency Energy Harvester (RFEH) with Fully On-Chip Tunable Voltage-Booster for Wideband Sensitivity Enhancement
title CMOS Radio Frequency Energy Harvester (RFEH) with Fully On-Chip Tunable Voltage-Booster for Wideband Sensitivity Enhancement
title_full CMOS Radio Frequency Energy Harvester (RFEH) with Fully On-Chip Tunable Voltage-Booster for Wideband Sensitivity Enhancement
title_fullStr CMOS Radio Frequency Energy Harvester (RFEH) with Fully On-Chip Tunable Voltage-Booster for Wideband Sensitivity Enhancement
title_full_unstemmed CMOS Radio Frequency Energy Harvester (RFEH) with Fully On-Chip Tunable Voltage-Booster for Wideband Sensitivity Enhancement
title_short CMOS Radio Frequency Energy Harvester (RFEH) with Fully On-Chip Tunable Voltage-Booster for Wideband Sensitivity Enhancement
title_sort cmos radio frequency energy harvester (rfeh) with fully on-chip tunable voltage-booster for wideband sensitivity enhancement
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9958904/
https://www.ncbi.nlm.nih.gov/pubmed/36838092
http://dx.doi.org/10.3390/mi14020392
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