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InGaN Laser Diodes with Etched Facets for Photonic Integrated Circuit Applications

The main objective of this work is to demonstrate and validate the feasibility of fabricating (Al, In) GaN laser diodes with etched facets. The facets are fabricated using a two-step dry and wet etching process: inductively coupled plasma—reactive ion etching in chlorine, followed by wet etching in...

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Autores principales: Gibasiewicz, Krzysztof, Kafar, Anna, Schiavon, Dario, Saba, Kiran, Marona, Łucja, Kamińska, Eliana, Perlin, Piotr
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9959041/
https://www.ncbi.nlm.nih.gov/pubmed/36838108
http://dx.doi.org/10.3390/mi14020408
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author Gibasiewicz, Krzysztof
Kafar, Anna
Schiavon, Dario
Saba, Kiran
Marona, Łucja
Kamińska, Eliana
Perlin, Piotr
author_facet Gibasiewicz, Krzysztof
Kafar, Anna
Schiavon, Dario
Saba, Kiran
Marona, Łucja
Kamińska, Eliana
Perlin, Piotr
author_sort Gibasiewicz, Krzysztof
collection PubMed
description The main objective of this work is to demonstrate and validate the feasibility of fabricating (Al, In) GaN laser diodes with etched facets. The facets are fabricated using a two-step dry and wet etching process: inductively coupled plasma—reactive ion etching in chlorine, followed by wet etching in tetramethylammonium hydroxide (TMAH). For the dry etching stage, an optimized procedure was used. For the wet etching step, the TMAH temperature was set to a constant value of 80 °C, and the only variable parameter was time. The time was divided into individual steps, each of 20 min. To validate the results, electro-optical parameters were measured after each step and compared with a cleaved reference, as well as with scanning electron microscope imaging of the front surface. It was determined that the optimal wet etching time was 40 min. For this time, the laser tested achieved a fully comparable threshold current (within 10%) with the cleaved reference. The described technology is an important step for the future manufacturing of photonic integrated circuits with laser diodes integrated on a chip and for ultra-short-cavity lasers.
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spelling pubmed-99590412023-02-26 InGaN Laser Diodes with Etched Facets for Photonic Integrated Circuit Applications Gibasiewicz, Krzysztof Kafar, Anna Schiavon, Dario Saba, Kiran Marona, Łucja Kamińska, Eliana Perlin, Piotr Micromachines (Basel) Article The main objective of this work is to demonstrate and validate the feasibility of fabricating (Al, In) GaN laser diodes with etched facets. The facets are fabricated using a two-step dry and wet etching process: inductively coupled plasma—reactive ion etching in chlorine, followed by wet etching in tetramethylammonium hydroxide (TMAH). For the dry etching stage, an optimized procedure was used. For the wet etching step, the TMAH temperature was set to a constant value of 80 °C, and the only variable parameter was time. The time was divided into individual steps, each of 20 min. To validate the results, electro-optical parameters were measured after each step and compared with a cleaved reference, as well as with scanning electron microscope imaging of the front surface. It was determined that the optimal wet etching time was 40 min. For this time, the laser tested achieved a fully comparable threshold current (within 10%) with the cleaved reference. The described technology is an important step for the future manufacturing of photonic integrated circuits with laser diodes integrated on a chip and for ultra-short-cavity lasers. MDPI 2023-02-09 /pmc/articles/PMC9959041/ /pubmed/36838108 http://dx.doi.org/10.3390/mi14020408 Text en © 2023 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Gibasiewicz, Krzysztof
Kafar, Anna
Schiavon, Dario
Saba, Kiran
Marona, Łucja
Kamińska, Eliana
Perlin, Piotr
InGaN Laser Diodes with Etched Facets for Photonic Integrated Circuit Applications
title InGaN Laser Diodes with Etched Facets for Photonic Integrated Circuit Applications
title_full InGaN Laser Diodes with Etched Facets for Photonic Integrated Circuit Applications
title_fullStr InGaN Laser Diodes with Etched Facets for Photonic Integrated Circuit Applications
title_full_unstemmed InGaN Laser Diodes with Etched Facets for Photonic Integrated Circuit Applications
title_short InGaN Laser Diodes with Etched Facets for Photonic Integrated Circuit Applications
title_sort ingan laser diodes with etched facets for photonic integrated circuit applications
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9959041/
https://www.ncbi.nlm.nih.gov/pubmed/36838108
http://dx.doi.org/10.3390/mi14020408
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