InGaN Laser Diodes with Etched Facets for Photonic Integrated Circuit Applications

The main objective of this work is to demonstrate and validate the feasibility of fabricating (Al, In) GaN laser diodes with etched facets. The facets are fabricated using a two-step dry and wet etching process: inductively coupled plasma—reactive ion etching in chlorine, followed by wet etching in...

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Detalles Bibliográficos
Autores principales: Gibasiewicz, Krzysztof, Kafar, Anna, Schiavon, Dario, Saba, Kiran, Marona, Łucja, Kamińska, Eliana, Perlin, Piotr
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9959041/
https://www.ncbi.nlm.nih.gov/pubmed/36838108
http://dx.doi.org/10.3390/mi14020408

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9959041/
https://www.ncbi.nlm.nih.gov/pubmed/36838108
http://dx.doi.org/10.3390/mi14020408

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