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Effects of Charge Trapping on Memory Characteristics for HfO(2)-Based Ferroelectric Field Effect Transistors

A full understanding of the impact of charge trapping on the memory window (MW) of HfO(2)-based ferroelectric field effect transistors (FeFETs) will permit the design of program and erase protocols, which will guide the application of these devices and maximize their useful life. The effects of char...

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Detalles Bibliográficos
Autores principales:	Wang, Jianjian, Bi, Jinshun, Xu, Yannan, Niu, Gang, Liu, Mengxin, Stempitsky, Viktor
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2023
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9959327/ https://www.ncbi.nlm.nih.gov/pubmed/36839006 http://dx.doi.org/10.3390/nano13040638

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