Effects of Electronic Irradiation on the Characteristics of the Silicon Magnetic Sensitive Transistor

This work researched the effects of irradiation on the current-voltage characteristics and voltage magnetic sensitivity of the silicon magnetic sensitive transistor (SMST). The 1-MeV electron irradiation source was used to irradiate the SMST. The irradiation fluences were 1 × 10(12) e/cm(2), 1 × 10(13) e/cm(2) and 1 × 10(14) e/cm(2), respectively (the irradiation flux was 1 × 10(10) cm(−2)·s(−1)). The experimental results demonstrate that the collector current (I(C)) of the SMST occurs attenuation after irradiation under the same collector voltage (V(CE)) and the base current (I(B)). The attenuated rate of the I(C) increases obviously with the enhance of electron irradiation fluence when the I(B) is the same. Moreover, the attenuated rate of the I(C) increases slight with the rise of the I(B) when the electron irradiation fluence is the same. When the supply voltage is 5.0 V (R(L) = 1.5 kΩ) and the I(B) is 4.0 mA, the voltage magnetic sensitivity (S(V)) of the SMST occurs attenuate after irradiation. The attenuated rate of the S(V) increases with the enhance of electron irradiation fluence.