Structure Optimization of Planar Nanoscale Vacuum Channel Transistor

Due to its unique structure, discoveries in nanoscale vacuum channel transistors (NVCTs) have demonstrated novel vacuum nanoelectronics. In this paper, the structural parameters of planar-type NVCTs were simulated, which illustrated the influence of emitter tip morphology on emission performance. Ba...

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Detalles Bibliográficos
Autores principales: Xu, Ji, Lin, Congyuan, Li, Yu, Zhao, Xueliang, Shi, Yongjiao, Zhang, Xiaobing
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9962290/
https://www.ncbi.nlm.nih.gov/pubmed/36838188
http://dx.doi.org/10.3390/mi14020488
Descripción
Sumario:Due to its unique structure, discoveries in nanoscale vacuum channel transistors (NVCTs) have demonstrated novel vacuum nanoelectronics. In this paper, the structural parameters of planar-type NVCTs were simulated, which illustrated the influence of emitter tip morphology on emission performance. Based on simulations, we successfully fabricated back-gate and side-gate NVCTs, respectively. Furthermore, the electric properties of NVCTs were investigated, showing the potential to realize the high integration of vacuum transistors.

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