Structure Optimization of Planar Nanoscale Vacuum Channel Transistor

Due to its unique structure, discoveries in nanoscale vacuum channel transistors (NVCTs) have demonstrated novel vacuum nanoelectronics. In this paper, the structural parameters of planar-type NVCTs were simulated, which illustrated the influence of emitter tip morphology on emission performance. Ba...

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Detalles Bibliográficos
Autores principales: Xu, Ji, Lin, Congyuan, Li, Yu, Zhao, Xueliang, Shi, Yongjiao, Zhang, Xiaobing
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9962290/
https://www.ncbi.nlm.nih.gov/pubmed/36838188
http://dx.doi.org/10.3390/mi14020488
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author Xu, Ji
Lin, Congyuan
Li, Yu
Zhao, Xueliang
Shi, Yongjiao
Zhang, Xiaobing
author_facet Xu, Ji
Lin, Congyuan
Li, Yu
Zhao, Xueliang
Shi, Yongjiao
Zhang, Xiaobing
author_sort Xu, Ji
collection PubMed
description Due to its unique structure, discoveries in nanoscale vacuum channel transistors (NVCTs) have demonstrated novel vacuum nanoelectronics. In this paper, the structural parameters of planar-type NVCTs were simulated, which illustrated the influence of emitter tip morphology on emission performance. Based on simulations, we successfully fabricated back-gate and side-gate NVCTs, respectively. Furthermore, the electric properties of NVCTs were investigated, showing the potential to realize the high integration of vacuum transistors.
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spelling pubmed-99622902023-02-26 Structure Optimization of Planar Nanoscale Vacuum Channel Transistor Xu, Ji Lin, Congyuan Li, Yu Zhao, Xueliang Shi, Yongjiao Zhang, Xiaobing Micromachines (Basel) Article Due to its unique structure, discoveries in nanoscale vacuum channel transistors (NVCTs) have demonstrated novel vacuum nanoelectronics. In this paper, the structural parameters of planar-type NVCTs were simulated, which illustrated the influence of emitter tip morphology on emission performance. Based on simulations, we successfully fabricated back-gate and side-gate NVCTs, respectively. Furthermore, the electric properties of NVCTs were investigated, showing the potential to realize the high integration of vacuum transistors. MDPI 2023-02-19 /pmc/articles/PMC9962290/ /pubmed/36838188 http://dx.doi.org/10.3390/mi14020488 Text en © 2023 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Xu, Ji
Lin, Congyuan
Li, Yu
Zhao, Xueliang
Shi, Yongjiao
Zhang, Xiaobing
Structure Optimization of Planar Nanoscale Vacuum Channel Transistor
title Structure Optimization of Planar Nanoscale Vacuum Channel Transistor
title_full Structure Optimization of Planar Nanoscale Vacuum Channel Transistor
title_fullStr Structure Optimization of Planar Nanoscale Vacuum Channel Transistor
title_full_unstemmed Structure Optimization of Planar Nanoscale Vacuum Channel Transistor
title_short Structure Optimization of Planar Nanoscale Vacuum Channel Transistor
title_sort structure optimization of planar nanoscale vacuum channel transistor
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9962290/
https://www.ncbi.nlm.nih.gov/pubmed/36838188
http://dx.doi.org/10.3390/mi14020488
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AT lincongyuan structureoptimizationofplanarnanoscalevacuumchanneltransistor
AT liyu structureoptimizationofplanarnanoscalevacuumchanneltransistor
AT zhaoxueliang structureoptimizationofplanarnanoscalevacuumchanneltransistor
AT shiyongjiao structureoptimizationofplanarnanoscalevacuumchanneltransistor
AT zhangxiaobing structureoptimizationofplanarnanoscalevacuumchanneltransistor

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