A 3C-SiC-on-Insulator-Based Integrated Photonic Platform Using an Anodic Bonding Process with Glass Substrates

Various crystalline silicon carbide (SiC) polytypes are emerging as promising photonic materials due to their wide bandgap energies and nonlinear optical properties. However, their wafer forms cannot readily provide a refractive index contrast for optical confinement in the SiC layer, which makes it difficult to realize a SiC-based integrated photonic platform. In this paper, we demonstrate a 3C-SiC-on-insulator (3C-SiCoI)-based integrated photonic platform by transferring the epitaxial 3C-SiC layer from a silicon die to a borosilicate glass substrate using anodic bonding. By fine-tuning the fabrication process, we demonstrated nearly 100% area transferring die-to-wafer bonding. We fabricated waveguide-coupled microring resonators using sulfur hexafluoride (SF(6))-based dry etching and demonstrated a moderate loaded quality (Q) factor of 1.4 × 10(5). We experimentally excluded the existence of the photorefractive effect in this platform at sub-milliwatt on-chip input optical power levels. This 3C-SiCoI platform is promising for applications, including large-scale integration of linear, nonlinear and quantum photonics.