Analytical and Physical Investigation on Source Resistance in In(x)Ga(1−x)As Quantum-Well High-Electron-Mobility Transistors

We present a fully analytical model and physical investigation on the source resistance (R(S)) in In(x)Ga(1−x)As quantum-well high-electron mobility transistors based on a three-layer TLM system. The R(S) model in this work was derived by solving the coupled quadratic differential equations for each...

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Detalles Bibliográficos
Autores principales: Yoo, Ji-Hoon, Lee, In-Geun, Tsutsumi, Takuya, Sugiyama, Hiroki, Matsuzaki, Hideaki, Lee, Jae-Hak, Kim, Dae-Hyun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Communication
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9962507/
https://www.ncbi.nlm.nih.gov/pubmed/36838139
http://dx.doi.org/10.3390/mi14020439

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9962507/
https://www.ncbi.nlm.nih.gov/pubmed/36838139
http://dx.doi.org/10.3390/mi14020439

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