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Graphene Oxide-Based Memristive Logic-in-Memory Circuit Enabling Normally-Off Computing
Memristive logic-in-memory circuits can provide energy- and cost-efficient computing, which is essential for artificial intelligence-based applications in the coming Internet-of-things era. Although memristive logic-in-memory circuits have been previously reported, the logic architecture requiring a...
Autores principales: | , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2023
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9963271/ https://www.ncbi.nlm.nih.gov/pubmed/36839078 http://dx.doi.org/10.3390/nano13040710 |
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author | Kim, Yeongkwon Jeon, Seung-Bae Jang, Byung Chul |
author_facet | Kim, Yeongkwon Jeon, Seung-Bae Jang, Byung Chul |
author_sort | Kim, Yeongkwon |
collection | PubMed |
description | Memristive logic-in-memory circuits can provide energy- and cost-efficient computing, which is essential for artificial intelligence-based applications in the coming Internet-of-things era. Although memristive logic-in-memory circuits have been previously reported, the logic architecture requiring additional components and the non-uniform switching of memristor have restricted demonstrations to simple gates. Using a nanoscale graphene oxide (GO) nanosheets-based memristor, we demonstrate the feasibility of a non-volatile logic-in-memory circuit that enables normally-off in-memory computing. The memristor based on GO film with an abundance of unusual functional groups exhibited unipolar resistive switching behavior with reliable endurance and retention characteristics, making it suitable for logic-in-memory circuit application. In a state of low resistance, temperature-dependent resistance and I-V characteristics indicated the presence of a metallic Ni filament. Using memristor-aided logic (MAGIC) architecture, we performed NOT and NOR gates experimentally. Additionally, other logic gates such as AND, NAND, and OR were successfully implemented by combining NOT and NOR universal logic gates in a crossbar array. These findings will pave the way for the development of next-generation computer systems beyond the von Neumann architecture, as well as carbon-based nanoelectronics in the future. |
format | Online Article Text |
id | pubmed-9963271 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2023 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-99632712023-02-26 Graphene Oxide-Based Memristive Logic-in-Memory Circuit Enabling Normally-Off Computing Kim, Yeongkwon Jeon, Seung-Bae Jang, Byung Chul Nanomaterials (Basel) Article Memristive logic-in-memory circuits can provide energy- and cost-efficient computing, which is essential for artificial intelligence-based applications in the coming Internet-of-things era. Although memristive logic-in-memory circuits have been previously reported, the logic architecture requiring additional components and the non-uniform switching of memristor have restricted demonstrations to simple gates. Using a nanoscale graphene oxide (GO) nanosheets-based memristor, we demonstrate the feasibility of a non-volatile logic-in-memory circuit that enables normally-off in-memory computing. The memristor based on GO film with an abundance of unusual functional groups exhibited unipolar resistive switching behavior with reliable endurance and retention characteristics, making it suitable for logic-in-memory circuit application. In a state of low resistance, temperature-dependent resistance and I-V characteristics indicated the presence of a metallic Ni filament. Using memristor-aided logic (MAGIC) architecture, we performed NOT and NOR gates experimentally. Additionally, other logic gates such as AND, NAND, and OR were successfully implemented by combining NOT and NOR universal logic gates in a crossbar array. These findings will pave the way for the development of next-generation computer systems beyond the von Neumann architecture, as well as carbon-based nanoelectronics in the future. MDPI 2023-02-13 /pmc/articles/PMC9963271/ /pubmed/36839078 http://dx.doi.org/10.3390/nano13040710 Text en © 2023 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Kim, Yeongkwon Jeon, Seung-Bae Jang, Byung Chul Graphene Oxide-Based Memristive Logic-in-Memory Circuit Enabling Normally-Off Computing |
title | Graphene Oxide-Based Memristive Logic-in-Memory Circuit Enabling Normally-Off Computing |
title_full | Graphene Oxide-Based Memristive Logic-in-Memory Circuit Enabling Normally-Off Computing |
title_fullStr | Graphene Oxide-Based Memristive Logic-in-Memory Circuit Enabling Normally-Off Computing |
title_full_unstemmed | Graphene Oxide-Based Memristive Logic-in-Memory Circuit Enabling Normally-Off Computing |
title_short | Graphene Oxide-Based Memristive Logic-in-Memory Circuit Enabling Normally-Off Computing |
title_sort | graphene oxide-based memristive logic-in-memory circuit enabling normally-off computing |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9963271/ https://www.ncbi.nlm.nih.gov/pubmed/36839078 http://dx.doi.org/10.3390/nano13040710 |
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