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Graphene Oxide-Based Memristive Logic-in-Memory Circuit Enabling Normally-Off Computing

Memristive logic-in-memory circuits can provide energy- and cost-efficient computing, which is essential for artificial intelligence-based applications in the coming Internet-of-things era. Although memristive logic-in-memory circuits have been previously reported, the logic architecture requiring a...

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Autores principales: Kim, Yeongkwon, Jeon, Seung-Bae, Jang, Byung Chul
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9963271/
https://www.ncbi.nlm.nih.gov/pubmed/36839078
http://dx.doi.org/10.3390/nano13040710
_version_ 1784896211721912320
author Kim, Yeongkwon
Jeon, Seung-Bae
Jang, Byung Chul
author_facet Kim, Yeongkwon
Jeon, Seung-Bae
Jang, Byung Chul
author_sort Kim, Yeongkwon
collection PubMed
description Memristive logic-in-memory circuits can provide energy- and cost-efficient computing, which is essential for artificial intelligence-based applications in the coming Internet-of-things era. Although memristive logic-in-memory circuits have been previously reported, the logic architecture requiring additional components and the non-uniform switching of memristor have restricted demonstrations to simple gates. Using a nanoscale graphene oxide (GO) nanosheets-based memristor, we demonstrate the feasibility of a non-volatile logic-in-memory circuit that enables normally-off in-memory computing. The memristor based on GO film with an abundance of unusual functional groups exhibited unipolar resistive switching behavior with reliable endurance and retention characteristics, making it suitable for logic-in-memory circuit application. In a state of low resistance, temperature-dependent resistance and I-V characteristics indicated the presence of a metallic Ni filament. Using memristor-aided logic (MAGIC) architecture, we performed NOT and NOR gates experimentally. Additionally, other logic gates such as AND, NAND, and OR were successfully implemented by combining NOT and NOR universal logic gates in a crossbar array. These findings will pave the way for the development of next-generation computer systems beyond the von Neumann architecture, as well as carbon-based nanoelectronics in the future.
format Online
Article
Text
id pubmed-9963271
institution National Center for Biotechnology Information
language English
publishDate 2023
publisher MDPI
record_format MEDLINE/PubMed
spelling pubmed-99632712023-02-26 Graphene Oxide-Based Memristive Logic-in-Memory Circuit Enabling Normally-Off Computing Kim, Yeongkwon Jeon, Seung-Bae Jang, Byung Chul Nanomaterials (Basel) Article Memristive logic-in-memory circuits can provide energy- and cost-efficient computing, which is essential for artificial intelligence-based applications in the coming Internet-of-things era. Although memristive logic-in-memory circuits have been previously reported, the logic architecture requiring additional components and the non-uniform switching of memristor have restricted demonstrations to simple gates. Using a nanoscale graphene oxide (GO) nanosheets-based memristor, we demonstrate the feasibility of a non-volatile logic-in-memory circuit that enables normally-off in-memory computing. The memristor based on GO film with an abundance of unusual functional groups exhibited unipolar resistive switching behavior with reliable endurance and retention characteristics, making it suitable for logic-in-memory circuit application. In a state of low resistance, temperature-dependent resistance and I-V characteristics indicated the presence of a metallic Ni filament. Using memristor-aided logic (MAGIC) architecture, we performed NOT and NOR gates experimentally. Additionally, other logic gates such as AND, NAND, and OR were successfully implemented by combining NOT and NOR universal logic gates in a crossbar array. These findings will pave the way for the development of next-generation computer systems beyond the von Neumann architecture, as well as carbon-based nanoelectronics in the future. MDPI 2023-02-13 /pmc/articles/PMC9963271/ /pubmed/36839078 http://dx.doi.org/10.3390/nano13040710 Text en © 2023 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Kim, Yeongkwon
Jeon, Seung-Bae
Jang, Byung Chul
Graphene Oxide-Based Memristive Logic-in-Memory Circuit Enabling Normally-Off Computing
title Graphene Oxide-Based Memristive Logic-in-Memory Circuit Enabling Normally-Off Computing
title_full Graphene Oxide-Based Memristive Logic-in-Memory Circuit Enabling Normally-Off Computing
title_fullStr Graphene Oxide-Based Memristive Logic-in-Memory Circuit Enabling Normally-Off Computing
title_full_unstemmed Graphene Oxide-Based Memristive Logic-in-Memory Circuit Enabling Normally-Off Computing
title_short Graphene Oxide-Based Memristive Logic-in-Memory Circuit Enabling Normally-Off Computing
title_sort graphene oxide-based memristive logic-in-memory circuit enabling normally-off computing
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9963271/
https://www.ncbi.nlm.nih.gov/pubmed/36839078
http://dx.doi.org/10.3390/nano13040710
work_keys_str_mv AT kimyeongkwon grapheneoxidebasedmemristivelogicinmemorycircuitenablingnormallyoffcomputing
AT jeonseungbae grapheneoxidebasedmemristivelogicinmemorycircuitenablingnormallyoffcomputing
AT jangbyungchul grapheneoxidebasedmemristivelogicinmemorycircuitenablingnormallyoffcomputing