Electrical and Structural Properties of Si(1−x)Ge(x) Nanowires Prepared from a Single-Source Precursor

Si(1−x)Ge(x) nanowires (NWs) were prepared by gold-supported chemical vapor deposition (CVD) using a single-source precursor with preformed Si–Ge bonds. Besides the tamed reactivity of the precursor, the approach reduces the process parameters associated with the control of decomposition characteris...

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Detalles Bibliográficos
Autores principales: Behrle, Raphael, Krause, Vanessa, Seifner, Michael S., Köstler, Benedikt, Dick, Kimberly A., Wagner, Matthias, Sistani, Masiar, Barth, Sven
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Communication
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9963966/
https://www.ncbi.nlm.nih.gov/pubmed/36838995
http://dx.doi.org/10.3390/nano13040627

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9963966/
https://www.ncbi.nlm.nih.gov/pubmed/36838995
http://dx.doi.org/10.3390/nano13040627

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