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Polymeric Interlayer in CdS-Free Electron-Selective Contact for Sb(2)Se(3) Thin-Film Solar Cells

High open-circuit voltage in Sb(2)Se(3) thin-film solar cells is a key challenge in the development of earth-abundant photovoltaic devices. CdS selective layers have been used as the standard electron contact in this technology. Long-term scalability issues due to cadmium toxicity and environmental...

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Detalles Bibliográficos
Autores principales: Rovira, David, Ros, Eloi, Tom, Thomas, Jiménez, Maykel, Miguel Asensi, José, Voz, Cristobal, López-Vidrier, Julian, Puigdollers, Joaquim, Bertomeu, Joan, Saucedo, Edgardo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9964030/
https://www.ncbi.nlm.nih.gov/pubmed/36834505
http://dx.doi.org/10.3390/ijms24043088
Descripción
Sumario:High open-circuit voltage in Sb(2)Se(3) thin-film solar cells is a key challenge in the development of earth-abundant photovoltaic devices. CdS selective layers have been used as the standard electron contact in this technology. Long-term scalability issues due to cadmium toxicity and environmental impact are of great concern. In this study, we propose a ZnO-based buffer layer with a polymer-film-modified top interface to replace CdS in Sb(2)Se(3) photovoltaic devices. The branched polyethylenimine layer at the ZnO and transparent electrode interface enhanced the performance of Sb(2)Se(3) solar cells. An important increase in open-circuit voltage from 243 mV to 344 mV and a maximum efficiency of 2.4% was achieved. This study attempts to establish a relation between the use of conjugated polyelectrolyte thin films in chalcogenide photovoltaics and the resulting device improvements.