Cargando…
Dual-Passband SAW Filter Based on a 32°YX-LN/SiO(2)/SiC Multilayered Substrate
To meet the demands of highly integrated and miniaturized radio frequency front-end (RFFE) modules, multi-passband filters which support multi-channel compounding come to the foreground. In this work, we proposed a new design of a dual-passband surface acoustic wave (SAW) filter based on a 32°YX-LiN...
Autores principales: | , , , , , , , , |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2023
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9965653/ https://www.ncbi.nlm.nih.gov/pubmed/36838179 http://dx.doi.org/10.3390/mi14020479 |
_version_ | 1784896818677547008 |
---|---|
author | Xu, Huiping Fu, Sulei Su, Rongxuan Liu, Peisen Wang, Rui Zeng, Fei Song, Cheng Wang, Weibiao Pan, Feng |
author_facet | Xu, Huiping Fu, Sulei Su, Rongxuan Liu, Peisen Wang, Rui Zeng, Fei Song, Cheng Wang, Weibiao Pan, Feng |
author_sort | Xu, Huiping |
collection | PubMed |
description | To meet the demands of highly integrated and miniaturized radio frequency front-end (RFFE) modules, multi-passband filters which support multi-channel compounding come to the foreground. In this work, we proposed a new design of a dual-passband surface acoustic wave (SAW) filter based on a 32°YX-LiNbO(3) (LN)/SiO(2)/SiC multilayered structure. The filter is of a standalone ladder topology and comprises dual-mode resonators, in which the shear horizontal (SH) mode and high-order SH mode are simultaneously excited through electrode thickness modulation. The impact of electrode thickness on the performance of the dual-mode resonator was systematically investigated by the finite element method (FEM), and resonators were prepared and verified the simulation results. The electromechanical coupling coefficients (K(2)) of the SH modes are 15.1% and 17.0%, while the maximum Bode-Q (Q(max)) values are 150 and 247, respectively, for the fabricated resonators with wavelengths of 1 μm and 1.1 μm. In terms of the high-order SH modes in these resonators, the K(2) values are 9.8% and 8.4%, and Q(max) values are 190 and 262, respectively. The fabricated dual-band filter shows the center frequencies (f(c)) of 3065 MHz and 4808 MHz as two bands, with 3-dB fractional bandwidths (FBW) of 5.1% and 5.9%, respectively. Such a dual-band SAW filter based on a conventional ladder topology is meaningful in terms of its compact layout and diminished area occupancy. This work provides a promising avenue to constitute a high-performance dual-passband SAW filter for sub-6 GHz RF application. |
format | Online Article Text |
id | pubmed-9965653 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2023 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-99656532023-02-26 Dual-Passband SAW Filter Based on a 32°YX-LN/SiO(2)/SiC Multilayered Substrate Xu, Huiping Fu, Sulei Su, Rongxuan Liu, Peisen Wang, Rui Zeng, Fei Song, Cheng Wang, Weibiao Pan, Feng Micromachines (Basel) Article To meet the demands of highly integrated and miniaturized radio frequency front-end (RFFE) modules, multi-passband filters which support multi-channel compounding come to the foreground. In this work, we proposed a new design of a dual-passband surface acoustic wave (SAW) filter based on a 32°YX-LiNbO(3) (LN)/SiO(2)/SiC multilayered structure. The filter is of a standalone ladder topology and comprises dual-mode resonators, in which the shear horizontal (SH) mode and high-order SH mode are simultaneously excited through electrode thickness modulation. The impact of electrode thickness on the performance of the dual-mode resonator was systematically investigated by the finite element method (FEM), and resonators were prepared and verified the simulation results. The electromechanical coupling coefficients (K(2)) of the SH modes are 15.1% and 17.0%, while the maximum Bode-Q (Q(max)) values are 150 and 247, respectively, for the fabricated resonators with wavelengths of 1 μm and 1.1 μm. In terms of the high-order SH modes in these resonators, the K(2) values are 9.8% and 8.4%, and Q(max) values are 190 and 262, respectively. The fabricated dual-band filter shows the center frequencies (f(c)) of 3065 MHz and 4808 MHz as two bands, with 3-dB fractional bandwidths (FBW) of 5.1% and 5.9%, respectively. Such a dual-band SAW filter based on a conventional ladder topology is meaningful in terms of its compact layout and diminished area occupancy. This work provides a promising avenue to constitute a high-performance dual-passband SAW filter for sub-6 GHz RF application. MDPI 2023-02-18 /pmc/articles/PMC9965653/ /pubmed/36838179 http://dx.doi.org/10.3390/mi14020479 Text en © 2023 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Xu, Huiping Fu, Sulei Su, Rongxuan Liu, Peisen Wang, Rui Zeng, Fei Song, Cheng Wang, Weibiao Pan, Feng Dual-Passband SAW Filter Based on a 32°YX-LN/SiO(2)/SiC Multilayered Substrate |
title | Dual-Passband SAW Filter Based on a 32°YX-LN/SiO(2)/SiC Multilayered Substrate |
title_full | Dual-Passband SAW Filter Based on a 32°YX-LN/SiO(2)/SiC Multilayered Substrate |
title_fullStr | Dual-Passband SAW Filter Based on a 32°YX-LN/SiO(2)/SiC Multilayered Substrate |
title_full_unstemmed | Dual-Passband SAW Filter Based on a 32°YX-LN/SiO(2)/SiC Multilayered Substrate |
title_short | Dual-Passband SAW Filter Based on a 32°YX-LN/SiO(2)/SiC Multilayered Substrate |
title_sort | dual-passband saw filter based on a 32°yx-ln/sio(2)/sic multilayered substrate |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9965653/ https://www.ncbi.nlm.nih.gov/pubmed/36838179 http://dx.doi.org/10.3390/mi14020479 |
work_keys_str_mv | AT xuhuiping dualpassbandsawfilterbasedona32yxlnsio2sicmultilayeredsubstrate AT fusulei dualpassbandsawfilterbasedona32yxlnsio2sicmultilayeredsubstrate AT surongxuan dualpassbandsawfilterbasedona32yxlnsio2sicmultilayeredsubstrate AT liupeisen dualpassbandsawfilterbasedona32yxlnsio2sicmultilayeredsubstrate AT wangrui dualpassbandsawfilterbasedona32yxlnsio2sicmultilayeredsubstrate AT zengfei dualpassbandsawfilterbasedona32yxlnsio2sicmultilayeredsubstrate AT songcheng dualpassbandsawfilterbasedona32yxlnsio2sicmultilayeredsubstrate AT wangweibiao dualpassbandsawfilterbasedona32yxlnsio2sicmultilayeredsubstrate AT panfeng dualpassbandsawfilterbasedona32yxlnsio2sicmultilayeredsubstrate |