Controlling Drain Side Tunneling Barrier Width in Electrically Doped PNPN Tunnel FET

In this paper, we propose and investigate an electrically doped (ED) PNPN tunnel field effect transistor (FET), in which the drain side tunneling barrier width is effectively controlled to obtain a suppressed ambipolar current. We present that the proposed PNPN tunnel FETs can be realized without ch...

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Detalles Bibliográficos
Autores principales: Shan, Chan, Yang, Lan, Liu, Ying, Liu, Zi-Meng, Zheng, Han
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9966305/
https://www.ncbi.nlm.nih.gov/pubmed/36838002
http://dx.doi.org/10.3390/mi14020301

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9966305/
https://www.ncbi.nlm.nih.gov/pubmed/36838002
http://dx.doi.org/10.3390/mi14020301

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