Lifetime Comparisons of Organic Light-Emitting Diodes Fabricated by Solution and Evaporation Processes

In this paper, a blue fluorescent organic light-emitting diode (OLED) with a 1 cm(2) emitting area was fabricated by a solution process. The ITO/spin MADN:13% UBD-07/TPBi/Al was used as the basic structure in which to add a hole-injection layer PEDOT:PSS and an electron-injection layer LiF, respectively. The device structure was optimized to obtain a longer lifetime. Firstly, the TPBi, which is an electron transport layer and a hole-blocking layer, was added to the structure to increase the electron transport rate. When the TPBi thickness was increased to 20 nm, the luminance was 221 cd/m(2), and the efficiency was 0.52 cd/A at a voltage of 8 V. Since the addition of the hole-injection layer (HIL) increased the hole current but did not increase the electron current, the electron transport layer (ETL) Alq(3) with the lowest unoccupied molecular orbital (LUMO) was added as stepped ETL to help the TPBi transport more electron current into the emitting layer. When the thickness of the TPBi/Alq(3) was 10 nm/15 nm, the luminance reached 862 cd/m(2), the efficiency was 1.29 cd/A, and the lifetime increased to 252 min. Subsequently, a hole-injection layer PEDOT:PSS with a thickness of 55 nm was added to make the ITO surface flatter and to reduce the probability of a short circuit caused by the spike effect. At this time, the luminance of 311 cd/m(2), the efficiency of 0.64 cd/A, and the lifetime of 121 min were obtained. Following this, the thickness of the emitting layer was doubled to increase the recombination probability of the electrons and the holes. When the thickness of the emitting layer was 90 nm, and the thermal evaporation method was used, the efficiency was 3.23 cd/A at a voltage of 8V, and the lifetime was improved to 482 min. Furthermore, when the thickness of the hole-injection layer PEDOT:PSS was increased to 220 nm, the efficiency increased to 3.86 cd/A, and the lifetime was increased to 529 min. An infrared thermal image camera was employed to detect the temperature variation of the blue OLEDs. After the current was gradually increased, it was found that the heat accumulation of the device became more and more significant. When the driving current reached 50 mA, the device burnt out. It was found that the maximum temperature that the OLED device could withstand was approximately 58.83 degrees C at a current of 36.36 mA.