Bottom-Up Cu Filling of High-Aspect-Ratio through-Diamond vias for 3D Integration in Thermal Management

Three-dimensional integrated packaging with through-silicon vias (TSV) can meet the requirements of high-speed computation, high-density storage, low power consumption, and compactness. However, higher power density increases heat dissipation problems, such as severe internal heat storage and promin...

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Detalles Bibliográficos
Autores principales: Zhao, Kechen, Zhao, Jiwen, Wei, Xiaoyun, Guan, Xiaoyu, Deng, Chaojun, Dai, Bing, Zhu, Jiaqi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9967922/
https://www.ncbi.nlm.nih.gov/pubmed/36837990
http://dx.doi.org/10.3390/mi14020290

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9967922/
https://www.ncbi.nlm.nih.gov/pubmed/36837990
http://dx.doi.org/10.3390/mi14020290

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