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Bottom-Up Cu Filling of High-Aspect-Ratio through-Diamond vias for 3D Integration in Thermal Management
Three-dimensional integrated packaging with through-silicon vias (TSV) can meet the requirements of high-speed computation, high-density storage, low power consumption, and compactness. However, higher power density increases heat dissipation problems, such as severe internal heat storage and promin...
| Autores principales: | , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2023
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9967922/ https://www.ncbi.nlm.nih.gov/pubmed/36837990 http://dx.doi.org/10.3390/mi14020290 |