The Total Ionizing Dose Effects on Perovskite CsPbBr(3) Semiconductor Detector

Perovskite CsPbBr(3) semiconductors exhibit unusually high defect tolerance leading to outstanding and unique optoelectronic properties, demonstrating strong potential for γ-radiation and X-ray detection at room temperature. However, the total dose effects of the perovskite CsPbBr(3) must be considered when working in a long-term radiation environment. In this work, the Schottky type of perovskite CsPbBr(3) detector was fabricated. Their electrical characteristics and γ-ray response were investigated before and after (60)Co γ ray irradiation with 100 and 200 krad (Si) doses. The γ-ray response of the Schottky-type planar CsPbBr(3) detector degrades significantly with the increase in total dose. At the total dose of 200 krad(Si), the spectral resolving ability to γ-ray response of the CsPbBr(3) detector has disappeared. However, with annealing at room temperature for one week, the device’s performance was partially recovered. Therefore, these results indicate that the total dose effects strongly influence the detector performance of the perovskite CsPbBr(3) semiconductor. Notably, it is concluded that the radiation-induced defects are not permanent, which could be mitigated even at room temperature. We believe this work could guide the development of perovskite detectors, especially under harsh radiation conditions.