Ferroelectric Content-Addressable Memory Cells with IGZO Channel: Impact of Retention Degradation on the Multibit Operation

[Image: see text] Indium gallium zinc oxide (IGZO)-based ferroelectric thin-film transistors (FeTFTs) are being vigorously investigated for being deployed in computing-in-memory (CIM) applications. Content-addressable memories (CAMs) are the quintessential example of CIM, which conduct a parallel se...

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Detalles Bibliográficos
Autores principales: Sk, Masud Rana, Thunder, Sunanda, Lehninger, David, Sanctis, Shawn, Raffel, Yannick, Lederer, Maximilian, Jank, Michael P. M., Kämpfe, Thomas, De, Sourav, Chakrabarti, Bhaswar
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2023
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9979788/
https://www.ncbi.nlm.nih.gov/pubmed/36873263
http://dx.doi.org/10.1021/acsaelm.2c01357

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9979788/
https://www.ncbi.nlm.nih.gov/pubmed/36873263
http://dx.doi.org/10.1021/acsaelm.2c01357

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