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Metal doped polyaniline as neuromorphic circuit elements for in-materia computing
Polyaniline-based atomic switches are material building blocks whose nanoscale structure and resultant neuromorphic character provide a new physical substrate for the development next-generation, nanoarchitectonic-enabled computing systems. Metal ion-doped devices consisting of a Ag/metal ion doped...
Autores principales: | , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Taylor & Francis
2023
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9980013/ https://www.ncbi.nlm.nih.gov/pubmed/36872943 http://dx.doi.org/10.1080/14686996.2023.2178815 |
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author | Higuchi, R. Lilak, S. Sillin, H. O. Tsuruoka, T. Kunitake, M. Nakayama, T. Gimzewski, J. K. Stieg, A. Z. |
author_facet | Higuchi, R. Lilak, S. Sillin, H. O. Tsuruoka, T. Kunitake, M. Nakayama, T. Gimzewski, J. K. Stieg, A. Z. |
author_sort | Higuchi, R. |
collection | PubMed |
description | Polyaniline-based atomic switches are material building blocks whose nanoscale structure and resultant neuromorphic character provide a new physical substrate for the development next-generation, nanoarchitectonic-enabled computing systems. Metal ion-doped devices consisting of a Ag/metal ion doped polyaniline/Pt sandwich structure were fabricated using an in situ wet process. The devices exhibited repeatable resistive switching between high (ON) and low (OFF) conductance states in both Ag(+) and Cu(2+) ion-doped devices. The threshold voltage for switching was>0.8 V and average ON/OFF conductance ratios (30 cycles for 3 samples) were 13 and 16 for Ag(+) and Cu(2+) devices, respectively. The ON state duration was determined by the decay to an OFF state after pulsed voltages of differing amplitude and frequency. The switching behaviour is analagous to short-term (STM) and long-term (LTM) memories of biological synapses. Memristive behaviour and evidence of quantized conductance were also observed and interpreted in terms of metal filament formation bridging the metal doped polymer layer. The successful realization of these properties within physical material systems indicate polyaniline frameworks as suitable neuromorphic substrates for in materia computing. |
format | Online Article Text |
id | pubmed-9980013 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2023 |
publisher | Taylor & Francis |
record_format | MEDLINE/PubMed |
spelling | pubmed-99800132023-03-03 Metal doped polyaniline as neuromorphic circuit elements for in-materia computing Higuchi, R. Lilak, S. Sillin, H. O. Tsuruoka, T. Kunitake, M. Nakayama, T. Gimzewski, J. K. Stieg, A. Z. Sci Technol Adv Mater Focus on Advancements of Functional Materials with Nanoarchitectonics as Post-Nanotechnology Concept in Materials Science Polyaniline-based atomic switches are material building blocks whose nanoscale structure and resultant neuromorphic character provide a new physical substrate for the development next-generation, nanoarchitectonic-enabled computing systems. Metal ion-doped devices consisting of a Ag/metal ion doped polyaniline/Pt sandwich structure were fabricated using an in situ wet process. The devices exhibited repeatable resistive switching between high (ON) and low (OFF) conductance states in both Ag(+) and Cu(2+) ion-doped devices. The threshold voltage for switching was>0.8 V and average ON/OFF conductance ratios (30 cycles for 3 samples) were 13 and 16 for Ag(+) and Cu(2+) devices, respectively. The ON state duration was determined by the decay to an OFF state after pulsed voltages of differing amplitude and frequency. The switching behaviour is analagous to short-term (STM) and long-term (LTM) memories of biological synapses. Memristive behaviour and evidence of quantized conductance were also observed and interpreted in terms of metal filament formation bridging the metal doped polymer layer. The successful realization of these properties within physical material systems indicate polyaniline frameworks as suitable neuromorphic substrates for in materia computing. Taylor & Francis 2023-02-27 /pmc/articles/PMC9980013/ /pubmed/36872943 http://dx.doi.org/10.1080/14686996.2023.2178815 Text en © 2023 The Author(s). Published by National Institute for Materials Science in partnership with Taylor & Francis Group. https://creativecommons.org/licenses/by/4.0/This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) ), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. |
spellingShingle | Focus on Advancements of Functional Materials with Nanoarchitectonics as Post-Nanotechnology Concept in Materials Science Higuchi, R. Lilak, S. Sillin, H. O. Tsuruoka, T. Kunitake, M. Nakayama, T. Gimzewski, J. K. Stieg, A. Z. Metal doped polyaniline as neuromorphic circuit elements for in-materia computing |
title | Metal doped polyaniline as neuromorphic circuit elements for in-materia computing |
title_full | Metal doped polyaniline as neuromorphic circuit elements for in-materia computing |
title_fullStr | Metal doped polyaniline as neuromorphic circuit elements for in-materia computing |
title_full_unstemmed | Metal doped polyaniline as neuromorphic circuit elements for in-materia computing |
title_short | Metal doped polyaniline as neuromorphic circuit elements for in-materia computing |
title_sort | metal doped polyaniline as neuromorphic circuit elements for in-materia computing |
topic | Focus on Advancements of Functional Materials with Nanoarchitectonics as Post-Nanotechnology Concept in Materials Science |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9980013/ https://www.ncbi.nlm.nih.gov/pubmed/36872943 http://dx.doi.org/10.1080/14686996.2023.2178815 |
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