A novel high-low-high Schottky barrier based bidirectional tunnel field effect transistor

In this work, we proposed a novel High-Low-High Schottky barrier bidirectional tunnel field effect transistor (HLHSB-BTFET). Compared with previous technology which is named as High Schottky barrier BTFET (HSB-BTFET), the proposed HLHSB-BTFET requires only one gate electrode with independent power s...

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Detalles Bibliográficos
Autores principales: Jin, Xiaoshi, Zhang, Shouqiang, Li, Mengmeng, Liu, Xi, Li, Meng
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Elsevier 2023
Materias:
Research Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9988471/
https://www.ncbi.nlm.nih.gov/pubmed/36895395
http://dx.doi.org/10.1016/j.heliyon.2023.e13809

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9988471/
https://www.ncbi.nlm.nih.gov/pubmed/36895395
http://dx.doi.org/10.1016/j.heliyon.2023.e13809

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