Mostrando 1 - 20 Resultados de 3,183 Para Buscar '"Inn"', tiempo de consulta: 0.98s Limitar resultados
  1. 1
    Publicado 1944
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    Alexander Mackay Innes
  2. 2
    “…The WHO recently revised INN definitions for antibodies now to be based on amino acid sequence identity. …”
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    The INNs and outs of antibody nonproprietary names
  3. 3
    “…In the context of a possible revision of the International Nonproprietary Names (INN) system of recombinant monoclonal antibodies, which is saturated, we propose several avenues of reflection driven by the primary goal of the INN, information of health-care professionals. …”
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    Rethinking the INN system for therapeutic antibodies
  4. 4
    “…InN superconductivity is very special among III–V semiconductors, as other III–V semiconductors (such as GaAs, GaN, InP, InAs, etc.) usually lack strong covalent bonding and thus seldom show superconductivity at low temperatures. …”
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    InN superconducting phase transition
  5. 5
    “…A following tuning of nitridation process enhanced the quality of InN film further, which means that a moderate, stable, and slow nitridation process by NH3 flow also plays the key role in growing better-quality InN film. …”
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    The InN epitaxy via controlling In bilayer
  6. 6
    por Calarco, Raffaella
    Publicado 2012
    “…An overview on InN nanowires, fabricated using either a catalyst-free molecular beam epitaxy method or a catalyst assisted chemical vapor deposition process, is provided. …”
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    InN Nanowires: Growth and Optoelectronic Properties
  7. 7
    Publicado 1912
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    William H. Hill & W. Innes Addison
  8. 8
    “…Indium nitride (InN) luminescence is substantially enhanced by the introduction of a multilayer graphene interlayer, mitigating the lattice mismatch between the InN epilayer and the Gallium nitride (GaN) template on a sapphire substrate via weak van der Waals interaction between graphene and nitride layers. …”
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    Enhancement of InN Luminescence by Introduction of Graphene Interlayer
  9. 9
    “…In the initial stage of the growth, amorphous InN(x) microparticles of cone shape in liquid phase form with assistance of an InN(x) wetting layer on the substrate. …”
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    Probing Nucleation Mechanism of Self-Catalyzed InN Nanostructures
  10. 10
    “…The NWs are eliminated above 600°C while long nitridation times at 500 and 600°C did not result into the efficient conversion of In(2)O(3 )to InN. We find that the nitridation of In(2)O(3 )is effective by using NH(3 )and H(2 )or a two-step temperature nitridation process using just NH(3 )and slower ramp rates. …”
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    An investigation into the conversion of In(2)O(3 )into InN nanowires
  11. 11
    “…The long-term (6 months) oxidization of hcp-InN (wurtzite, InN-w) nanostructures (crystalline/amorphous) synthesized on Si [100] substrates is analyzed. …”
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    Long-term oxidization and phase transition of InN nanotextures
  12. 12
    “…In this work, we demonstrated that high density InN nanowires can be directly grown on brass substrates by metal-organic chemical vapor deposition. …”
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    Morphology Controlled Fabrication of InN Nanowires on Brass Substrates
  13. 13
    Publicado 1887
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    Central London Throat and Ear Hospital: Gray's Inn Road
  14. 14
    “…The present work explores the electrical transport and infrared (IR) photoresponse properties of InN nanorods (NRs)/n-Si heterojunction grown by plasma-assisted molecular beam epitaxy. …”
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    Transport and infrared photoresponse properties of InN nanorods/Si heterojunction
  15. 15
    “…The structural, electronic and vibrational properties of InN under pressures up to 20 GPa have been investigated using the pseudo-potential plane wave method (PP-PW). …”
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    Structural, electronic and vibrational properties of InN under high pressure
  16. 16
    “…The present work reports ordered terahertz detectors arrays based on neatly aligned InN nanowires. The InN nanostructures (nanowires and nano-necklaces) were achieved by chemical vapor deposition growth, and then InN nanowires were successfully transferred and aligned into micrometer-sized groups by a “transfer-printing” method. …”
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    Terahertz detectors arrays based on orderly aligned InN nanowires
  17. 17
    “…In this work, we successfully prepared vertically well-aligned c-axis InN nanorods on amorphous glass substrate by metal-organic chemical vapor deposition. …”
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    Growth of Well-Aligned InN Nanorods on Amorphous Glass Substrates
  18. 18
    “…Here, we study carrier recombination and diffusion using the light-induced transient grating technique in InN epilayers grown by pulsed MOCVD on c-plane sapphire. …”
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    Direct Auger recombination and density-dependent hole diffusion in InN
  19. 19
    “…It is a fact that surface electron accumulation layer with sheet electron density in the magnitude of ~10(13) cm(−2) on InN, either as-grown or Mg-doped, makes InN an excellent candidate for sensing application. …”
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    Enhanced Hydrogen Detection Based on Mg-Doped InN Epilayer
  20. 20
    “…With a bandgap of about 0.7 eV, InN can emit light in the near infrared, potentially overlapping with the part of the electromagnetic spectrum currently dominated by III-As and III-P technology. …”
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    Metalorganic chemical vapor deposition of InN quantum dots and nanostructures
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